Electro-optic measurement of carrier mobility in an organic thin-film transistor

E. G. Bittle; J. W. Brill; J. E. Anthony

doi:10.1063/1.3460526

Electro-optic measurement of carrier mobility in an organic thin-film transistor

E. G. Bittle
, J. W. Brill
, J. E. Anthony

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We have used an electro-optic technique to measure the position-dependent infrared absorption of holes injected into a thin crystal of the organic semiconductor, 6,13-bis(triisopropylsilylethynyl)-pentacene incorporated in a field-effect transistor. By applying square-wave voltages of variable frequency to the gate or drain, one can measure the time it takes for charges to accumulate on the surface, and therefore, determine their mobility.

Original language	English
Article number	013302
Journal	Applied Physics Letters
Volume	97
Issue number	1
DOIs	https://doi.org/10.1063/1.3460526
State	Published - Jul 5 2010

Bibliographical note

Funding Information:
We thank K.-W. Ng and J. P. Straley for helpful discussions. This work was supported by the National Science Foundation, Grant Nos. DMR-0800367, CHE-0749473, and EPS-0814194.

Funding

We thank K.-W. Ng and J. P. Straley for helpful discussions. This work was supported by the National Science Foundation, Grant Nos. DMR-0800367, CHE-0749473, and EPS-0814194.

Funders	Funder number
National Science Foundation (NSF)	0801764

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3460526

Cite this

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N2 - We have used an electro-optic technique to measure the position-dependent infrared absorption of holes injected into a thin crystal of the organic semiconductor, 6,13-bis(triisopropylsilylethynyl)-pentacene incorporated in a field-effect transistor. By applying square-wave voltages of variable frequency to the gate or drain, one can measure the time it takes for charges to accumulate on the surface, and therefore, determine their mobility.

AB - We have used an electro-optic technique to measure the position-dependent infrared absorption of holes injected into a thin crystal of the organic semiconductor, 6,13-bis(triisopropylsilylethynyl)-pentacene incorporated in a field-effect transistor. By applying square-wave voltages of variable frequency to the gate or drain, one can measure the time it takes for charges to accumulate on the surface, and therefore, determine their mobility.

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Electro-optic measurement of carrier mobility in an organic thin-film transistor

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Bibliographical note

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