Electronic and optical properties of La-doped S r3 i r2 O7 epitaxial thin films

M. Souri, J. Terzic, J. M. Johnson, J. G. Connell, J. H. Gruenewald, J. Thompson, J. W. Brill, J. Hwang, G. Cao, A. Seo

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


We have investigated structural, transport, and optical properties of tensile strained (Sr1-xLax)3Ir2O7 (x=0, 0.025, 0.05) epitaxial thin films. While high-Tc superconductivity is predicted theoretically in the system, we have observed that all of the samples remain insulating with finite optical gap energies and Mott variable-range hopping characteristics in transport. Cross-sectional scanning transmission electron microscopy indicates that structural defects such as stacking faults appear in this system. The insulating behavior of the La-doped Sr3Ir2O7 thin films is presumably due to disorder-induced localization and ineffective electron doping of La, which brings to light the intriguing difference between epitaxial thin films and bulk single crystals of the iridates.

Original languageEnglish
Article number024803
JournalPhysical Review Materials
Issue number2
StatePublished - Feb 14 2018

Bibliographical note

Publisher Copyright:
© 2018 American Physical Society.

ASJC Scopus subject areas

  • General Materials Science
  • Physics and Astronomy (miscellaneous)


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