Electronic and optical properties of La-doped S r3 i r2 O7 epitaxial thin films

M. Souri; J. Terzic; J. M. Johnson; J. G. Connell; J. H. Gruenewald; J. Thompson; J. W. Brill; J. Hwang; G. Cao; A. Seo

doi:10.1103/PhysRevMaterials.2.024803

Electronic and optical properties of La-doped S r3 i r2 O7 epitaxial thin films

M. Souri, J. Terzic, J. M. Johnson, J. G. Connell, J. H. Gruenewald, J. Thompson, J. W. Brill, J. Hwang, G. Cao, A. Seo

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We have investigated structural, transport, and optical properties of tensile strained (Sr1-xLax)3Ir2O7 (x=0, 0.025, 0.05) epitaxial thin films. While high-Tc superconductivity is predicted theoretically in the system, we have observed that all of the samples remain insulating with finite optical gap energies and Mott variable-range hopping characteristics in transport. Cross-sectional scanning transmission electron microscopy indicates that structural defects such as stacking faults appear in this system. The insulating behavior of the La-doped Sr3Ir2O7 thin films is presumably due to disorder-induced localization and ineffective electron doping of La, which brings to light the intriguing difference between epitaxial thin films and bulk single crystals of the iridates.

Original language	English
Article number	024803
Journal	Physical Review Materials
Volume	2
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevMaterials.2.024803
State	Published - Feb 14 2018

Bibliographical note

Publisher Copyright:
© 2018 American Physical Society.

ASJC Scopus subject areas

General Materials Science
Physics and Astronomy (miscellaneous)

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10.1103/PhysRevMaterials.2.024803

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title = "Electronic and optical properties of La-doped S r3 i r2 O7 epitaxial thin films",

abstract = "We have investigated structural, transport, and optical properties of tensile strained (Sr1-xLax)3Ir2O7 (x=0, 0.025, 0.05) epitaxial thin films. While high-Tc superconductivity is predicted theoretically in the system, we have observed that all of the samples remain insulating with finite optical gap energies and Mott variable-range hopping characteristics in transport. Cross-sectional scanning transmission electron microscopy indicates that structural defects such as stacking faults appear in this system. The insulating behavior of the La-doped Sr3Ir2O7 thin films is presumably due to disorder-induced localization and ineffective electron doping of La, which brings to light the intriguing difference between epitaxial thin films and bulk single crystals of the iridates.",

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AU - Souri, M.

AU - Terzic, J.

AU - Johnson, J. M.

AU - Connell, J. G.

AU - Gruenewald, J. H.

AU - Thompson, J.

AU - Brill, J. W.

AU - Hwang, J.

AU - Cao, G.

AU - Seo, A.

PY - 2018/2/14

Y1 - 2018/2/14

N2 - We have investigated structural, transport, and optical properties of tensile strained (Sr1-xLax)3Ir2O7 (x=0, 0.025, 0.05) epitaxial thin films. While high-Tc superconductivity is predicted theoretically in the system, we have observed that all of the samples remain insulating with finite optical gap energies and Mott variable-range hopping characteristics in transport. Cross-sectional scanning transmission electron microscopy indicates that structural defects such as stacking faults appear in this system. The insulating behavior of the La-doped Sr3Ir2O7 thin films is presumably due to disorder-induced localization and ineffective electron doping of La, which brings to light the intriguing difference between epitaxial thin films and bulk single crystals of the iridates.

AB - We have investigated structural, transport, and optical properties of tensile strained (Sr1-xLax)3Ir2O7 (x=0, 0.025, 0.05) epitaxial thin films. While high-Tc superconductivity is predicted theoretically in the system, we have observed that all of the samples remain insulating with finite optical gap energies and Mott variable-range hopping characteristics in transport. Cross-sectional scanning transmission electron microscopy indicates that structural defects such as stacking faults appear in this system. The insulating behavior of the La-doped Sr3Ir2O7 thin films is presumably due to disorder-induced localization and ineffective electron doping of La, which brings to light the intriguing difference between epitaxial thin films and bulk single crystals of the iridates.

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Electronic and optical properties of La-doped S r3 i r2 O7 epitaxial thin films

Abstract

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