TY - JOUR
T1 - Electrostatic force microscopy and electrical isolation of etched few-layer graphene nano-domains
AU - Hunley, D. Patrick
AU - Sundararajan, Abhishek
AU - Boland, Mathias J.
AU - Strachan, Douglas R.
N1 - Publisher Copyright:
© 2014 AIP Publishing LLC.
PY - 2014/12/15
Y1 - 2014/12/15
N2 - Nanostructured bi-layer graphene samples formed through catalytic etching are investigated with electrostatic force microscopy. The measurements and supporting computations show a variation in the microscopy signal for different nano-domains that are indicative of changes in capacitive coupling related to their small sizes. Abrupt capacitance variations detected across etch tracks indicates that the nano-domains have strong electrical isolation between them. Comparison of the measurements to a resistor-capacitor model indicates that the resistance between two bi-layer graphene regions separated by an approximately 10 nm wide etch track is greater than about 1 × 10 12 Ω with a corresponding gap resistivity greater than about 3 × 10 14 Ω · nm. This extremely large gap resistivity suggests that catalytic etch tracks within few-layer graphene samples are sufficient for providing electrical isolation between separate nano-domains that could permit their use in constructing atomically thin nanogap electrodes, interconnects, and nanoribbons.
AB - Nanostructured bi-layer graphene samples formed through catalytic etching are investigated with electrostatic force microscopy. The measurements and supporting computations show a variation in the microscopy signal for different nano-domains that are indicative of changes in capacitive coupling related to their small sizes. Abrupt capacitance variations detected across etch tracks indicates that the nano-domains have strong electrical isolation between them. Comparison of the measurements to a resistor-capacitor model indicates that the resistance between two bi-layer graphene regions separated by an approximately 10 nm wide etch track is greater than about 1 × 10 12 Ω with a corresponding gap resistivity greater than about 3 × 10 14 Ω · nm. This extremely large gap resistivity suggests that catalytic etch tracks within few-layer graphene samples are sufficient for providing electrical isolation between separate nano-domains that could permit their use in constructing atomically thin nanogap electrodes, interconnects, and nanoribbons.
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U2 - 10.1063/1.4904709
DO - 10.1063/1.4904709
M3 - Article
AN - SCOPUS:84919686189
SN - 0003-6951
VL - 105
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 24
M1 - 243109
ER -