Abstract
In this paper, we present a hybrid MTJ/CMOS based low-power design of a 4-2 compressor. Furthermore, to gain more energy efficiency we implemented the proposed design with carbon nanotube field effect transistor (CNFET) technology and compared it with the MTJ/CMOS design. Simulations are performed at 45 nm and 32 nm CMOS technology with perpendicular anisotropy CoFeB/MgO MTJ model using Cadence Spectre simulator. Simulation results indicate that our hybrid MTJ/CMOS-based design has about two times lower power-delay product compared to the previous CMOS-based designs. Also, our MTJ/CNFET compressor has more than 3.5 times lower PDP compared to the CMOS based design.
Original language | English |
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Pages (from-to) | 1-9 |
Number of pages | 9 |
Journal | Microelectronics Journal |
Volume | 67 |
DOIs | |
State | Published - Sep 2017 |
Bibliographical note
Publisher Copyright:© 2017 Elsevier Ltd
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering