Energy-efficient magnetic circuits based on nanoelectronic devices

Fazel Sharifi, Himanshu Thapliyal

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

As CMOS technology scales down to the nanoscale, high leakage power consumption becomes the main problem and challenge of electronic circuits. To overcome this challenge, nano-emerging technologies and logic-in-memory structure are being studied. Magnetic tunnel junction (MTJ) is an emerging technology which has many advantages when used in logic in memory structures in conjunction with CMOS. In this paper, we present novel designs of hybrid MTJ/CMOS circuits; AND, XOR and 1-bit full adder. The proposed MTJ/CMOS full adder design has 71% lower Power-delay-product (PDP) compared to the previous MTJ/CMOS full adder. To further improve the energy efficiency we investigated the use of nanoelectronic devices (CNFET, FinFET) in the proposed circuits and compared them with the CMOS based designs. The hybrid MTJ/CNFET and MJT/FinFET full adders have about 18 and 11 times lower PDP, respectively, when compared to the MJT/CMOS design. Also, the MTJ/CNFET based full adder has 66% lower PDP than the MTJ/FinFET based design.

Original languageEnglish
Title of host publicationIEEE International Symposium on Circuits and Systems
Subtitle of host publicationFrom Dreams to Innovation, ISCAS 2017 - Conference Proceedings
ISBN (Electronic)9781467368520
DOIs
StatePublished - Sep 25 2017
Event50th IEEE International Symposium on Circuits and Systems, ISCAS 2017 - Baltimore, United States
Duration: May 28 2017May 31 2017

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Conference

Conference50th IEEE International Symposium on Circuits and Systems, ISCAS 2017
Country/TerritoryUnited States
CityBaltimore
Period5/28/175/31/17

Keywords

  • CNFET
  • FinFET
  • MTJ
  • Spintronics

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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