Engineering of effective back-contact barrier of CZTSe: Nanoscale Ge solar cells – MoSe2 defects implication

Sanghyun Lee, Kent J. Price, Edgardo Saucedo, Sergio Giraldo

Research output: Contribution to journalArticlepeer-review

19 Scopus citations


Using temperature-dependent measurements and device modeling, we systematically study the effective back-contact barrier of CZTSe devices to improve the property of the back-contact interface. By comparing with CZTSe devices with various nanoscale Ge configurations, CZTSe nanoscale Ge bi-layers devices show the improved power conversion efficiency by 1.1%. DC magnetron sputtering is used to fabricate CZTSe: nanolayer Ge devices. Critical device parameters are characterized to understand the impact of nanoscale Ge films on the back-contact device characteristics. Based on empirical results, modeling is performed for the influence of MoSe2 defects on the effective back-contact barrier. Analysis of experimental results of Ge bi-layers devices with the improved back-contact barrier makes a good agreement with modeling and Sentaurus TCAD simulation at the 95% confidence-level. The conversion efficiency of CZTSe: nanoscale Ge bi-layers devices is improved up to 8.3%.

Original languageEnglish
Pages (from-to)114-120
Number of pages7
JournalSolar Energy
StatePublished - Dec 2019

Bibliographical note

Publisher Copyright:
© 2019 International Solar Energy Society


  • Back-contact
  • CZTSe
  • Ge nanolayer
  • Kesterite
  • Scottky barrier
  • Thin film solar cells

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • General Materials Science


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