Engineering of effective back-contact barrier of CZTSe: Nanoscale Ge solar cells – MoSe2 defects implication

Sanghyun Lee; Kent J. Price; Edgardo Saucedo; Sergio Giraldo

doi:10.1016/j.solener.2019.10.042

Engineering of effective back-contact barrier of CZTSe: Nanoscale Ge solar cells – MoSe₂ defects implication

Sanghyun Lee, Kent J. Price, Edgardo Saucedo, Sergio Giraldo

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

Using temperature-dependent measurements and device modeling, we systematically study the effective back-contact barrier of CZTSe devices to improve the property of the back-contact interface. By comparing with CZTSe devices with various nanoscale Ge configurations, CZTSe nanoscale Ge bi-layers devices show the improved power conversion efficiency by 1.1%. DC magnetron sputtering is used to fabricate CZTSe: nanolayer Ge devices. Critical device parameters are characterized to understand the impact of nanoscale Ge films on the back-contact device characteristics. Based on empirical results, modeling is performed for the influence of MoSe₂ defects on the effective back-contact barrier. Analysis of experimental results of Ge bi-layers devices with the improved back-contact barrier makes a good agreement with modeling and Sentaurus TCAD simulation at the 95% confidence-level. The conversion efficiency of CZTSe: nanoscale Ge bi-layers devices is improved up to 8.3%.

Original language	English
Pages (from-to)	114-120
Number of pages	7
Journal	Solar Energy
Volume	194
DOIs	https://doi.org/10.1016/j.solener.2019.10.042
State	Published - Dec 2019

Bibliographical note

Publisher Copyright:
© 2019 International Solar Energy Society

Funding

This work was partially supported by the Louisville Gas & Energy and Kentucky Utility Foundation , Duke Energy Foundation , and CSRC at Indiana State University. This work was partially supported by the Louisville Gas & Energy and Kentucky Utility Foundation, Duke Energy Foundation, and CSRC at Indiana State University.

Funders	Funder number
Louisville Gas & Energy and Kentucky Utility Foundation
Louisville Gas & Energy and Kentucky Utility Foundation , Duke Energy Foundation
Duke Energy Foundation
Indiana State University
Colorado Society for Respiratory Care

Keywords

Back-contact
CZTSe
Ge nanolayer
Kesterite
Scottky barrier
Thin film solar cells

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
General Materials Science

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.solener.2019.10.042

Cite this

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title = "Engineering of effective back-contact barrier of CZTSe: Nanoscale Ge solar cells – MoSe2 defects implication",

abstract = "Using temperature-dependent measurements and device modeling, we systematically study the effective back-contact barrier of CZTSe devices to improve the property of the back-contact interface. By comparing with CZTSe devices with various nanoscale Ge configurations, CZTSe nanoscale Ge bi-layers devices show the improved power conversion efficiency by 1.1\%. DC magnetron sputtering is used to fabricate CZTSe: nanolayer Ge devices. Critical device parameters are characterized to understand the impact of nanoscale Ge films on the back-contact device characteristics. Based on empirical results, modeling is performed for the influence of MoSe2 defects on the effective back-contact barrier. Analysis of experimental results of Ge bi-layers devices with the improved back-contact barrier makes a good agreement with modeling and Sentaurus TCAD simulation at the 95\% confidence-level. The conversion efficiency of CZTSe: nanoscale Ge bi-layers devices is improved up to 8.3\%.",

keywords = "Back-contact, CZTSe, Ge nanolayer, Kesterite, Scottky barrier, Thin film solar cells",

author = "Sanghyun Lee and Price, \{Kent J.\} and Edgardo Saucedo and Sergio Giraldo",

note = "Publisher Copyright: {\textcopyright} 2019 International Solar Energy Society",

year = "2019",

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doi = "10.1016/j.solener.2019.10.042",

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AU - Lee, Sanghyun

AU - Price, Kent J.

AU - Saucedo, Edgardo

AU - Giraldo, Sergio

PY - 2019/12

Y1 - 2019/12

N2 - Using temperature-dependent measurements and device modeling, we systematically study the effective back-contact barrier of CZTSe devices to improve the property of the back-contact interface. By comparing with CZTSe devices with various nanoscale Ge configurations, CZTSe nanoscale Ge bi-layers devices show the improved power conversion efficiency by 1.1%. DC magnetron sputtering is used to fabricate CZTSe: nanolayer Ge devices. Critical device parameters are characterized to understand the impact of nanoscale Ge films on the back-contact device characteristics. Based on empirical results, modeling is performed for the influence of MoSe2 defects on the effective back-contact barrier. Analysis of experimental results of Ge bi-layers devices with the improved back-contact barrier makes a good agreement with modeling and Sentaurus TCAD simulation at the 95% confidence-level. The conversion efficiency of CZTSe: nanoscale Ge bi-layers devices is improved up to 8.3%.

AB - Using temperature-dependent measurements and device modeling, we systematically study the effective back-contact barrier of CZTSe devices to improve the property of the back-contact interface. By comparing with CZTSe devices with various nanoscale Ge configurations, CZTSe nanoscale Ge bi-layers devices show the improved power conversion efficiency by 1.1%. DC magnetron sputtering is used to fabricate CZTSe: nanolayer Ge devices. Critical device parameters are characterized to understand the impact of nanoscale Ge films on the back-contact device characteristics. Based on empirical results, modeling is performed for the influence of MoSe2 defects on the effective back-contact barrier. Analysis of experimental results of Ge bi-layers devices with the improved back-contact barrier makes a good agreement with modeling and Sentaurus TCAD simulation at the 95% confidence-level. The conversion efficiency of CZTSe: nanoscale Ge bi-layers devices is improved up to 8.3%.

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