This paper systematically compares the gas sensing properties of organic field-effect transistors (OFETs) based on patterned 5,11-bis(triethylsilylethynyl)anthradithiophene (TES-ADT) films, by adopting TES-ADT crystal arrays of various shapes and dimensions. The patterning and crystallization of spin-cast TES-ADT layers are achieved by the use of a solvent-containing engraved polydimethylsiloxane (PDMS) mold. Decreasing width of the TES-ADT pattern enhances gas sensing performance, as well as field-effect mobility of OFETs. The decreased grain boundary density at narrower line width contributes to the increase of field-effect mobility. On the other hand, the increased sensing performance is mainly due to the increased area of crystal edges, which provides a diffusion pathway for gas molecules to arrive at the semiconductor-dielectric interface. This study provides new perspectives on the diffusion pathway of gas molecules in OFET-based gas sensor, and will be useful for the design of active channel to boost the gas sensing properties of OFETs.
|Journal||Advanced Materials Interfaces|
|State||Published - Feb 1 2020|
Bibliographical noteFunding Information:
This paper was supported by Konkuk University Researcher Fund in 2019. This was also supported by grants from the Basic Science Research Program (Code No. 2019R1A2C1010723) of the Ministry of Science, ICT and Future Planning, Korea and the Korea Institute of Energy Technology Evaluation and Planning and the Ministry of Trade, Industry and Energy (MOTIE, 20174010201490).
© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Copyright 2020 Elsevier B.V., All rights reserved.
- gas sensors
- organic semiconductors
- organic transistors
- soluble acene
- solvent vapor annealing
ASJC Scopus subject areas
- Mechanics of Materials
- Mechanical Engineering