TY - GEN
T1 - Enhanced phonon-energy coupling
T2 - 2006 MRS Spring Meeting
AU - Chen, Zhi
AU - Guo, Jun
AU - Samantaray, Chandan B.
PY - 2006
Y1 - 2006
N2 - We study in detail a newly discovered effect, phonon-energy-coupling enhancement (PECE) effect, produced by rapid thermal processing (RTP). It includes two aspects: (1) Strengthening Si-D bonds and Si-O bonds and (2) Change of energy band structure and effective mass due to thermal shock. It is shown that not only Si-D bonds but also Si-O bonds have been strengthened dramatically, leading to enhancement of robustness of the oxide structure and the oxide/Si interface. For thick oxides (>3 nm), the gate leakage current has been reduced by two orders of magnitude and the breakdown voltage has been improved by ∼30% due to phonon-energy coupling. For ultrathin oxides (2.2 nm), the direct tunneling current has been reduced by five orders of magnitude, equivalent to that of HfO2, probably due to the increased effective mass and barrier height.
AB - We study in detail a newly discovered effect, phonon-energy-coupling enhancement (PECE) effect, produced by rapid thermal processing (RTP). It includes two aspects: (1) Strengthening Si-D bonds and Si-O bonds and (2) Change of energy band structure and effective mass due to thermal shock. It is shown that not only Si-D bonds but also Si-O bonds have been strengthened dramatically, leading to enhancement of robustness of the oxide structure and the oxide/Si interface. For thick oxides (>3 nm), the gate leakage current has been reduced by two orders of magnitude and the breakdown voltage has been improved by ∼30% due to phonon-energy coupling. For ultrathin oxides (2.2 nm), the direct tunneling current has been reduced by five orders of magnitude, equivalent to that of HfO2, probably due to the increased effective mass and barrier height.
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U2 - 10.1557/proc-0917-e05-25
DO - 10.1557/proc-0917-e05-25
M3 - Conference contribution
AN - SCOPUS:33947658381
SN - 1558998748
SN - 9781558998742
T3 - Materials Research Society Symposium Proceedings
SP - 73
EP - 81
BT - Gate Stack Scaling
Y2 - 17 April 2006 through 21 April 2006
ER -