Epitaxial growth of α-Fe films on Si(111) substrates

Yang Tse Cheng; Yen Lung Chen; M. M. Karmarkar; Wen Jin Meng

doi:10.1063/1.106312

Epitaxial growth of α-Fe films on Si(111) substrates

Yang Tse Cheng, Yen Lung Chen, M. M. Karmarkar, Wen Jin Meng

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

Epitaxial α-Fe films have been grown on HF cleaned Si(111) substrates at 30°C by electron beam evaporation in an ultrahigh vacuum environment to a thickness of several thousands of Angstroms. Conventional θ-2θ x-ray diffraction shows that only the Fe(222) peak is present, indicating that the films are oriented with the Fe(111) plane parallel to the Si(111) plane. Transmission electron microscopy shows that the Fe[11̄0] direction is parallel to the Si[11̄0] direction in the plane of the substrate.

Original language	English
Pages (from-to)	953-955
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	8
DOIs	https://doi.org/10.1063/1.106312
State	Published - 1991

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Epitaxial growth of α-Fe films on Si(111) substrates",

abstract = "Epitaxial α-Fe films have been grown on HF cleaned Si(111) substrates at 30°C by electron beam evaporation in an ultrahigh vacuum environment to a thickness of several thousands of Angstroms. Conventional θ-2θ x-ray diffraction shows that only the Fe(222) peak is present, indicating that the films are oriented with the Fe(111) plane parallel to the Si(111) plane. Transmission electron microscopy shows that the Fe[1{\=1}0] direction is parallel to the Si[1{\=1}0] direction in the plane of the substrate.",

author = "Cheng, {Yang Tse} and Chen, {Yen Lung} and Karmarkar, {M. M.} and Meng, {Wen Jin}",

year = "1991",

doi = "10.1063/1.106312",

language = "English",

volume = "59",

pages = "953--955",

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T1 - Epitaxial growth of α-Fe films on Si(111) substrates

AU - Cheng, Yang Tse

AU - Chen, Yen Lung

AU - Karmarkar, M. M.

AU - Meng, Wen Jin

PY - 1991

Y1 - 1991

N2 - Epitaxial α-Fe films have been grown on HF cleaned Si(111) substrates at 30°C by electron beam evaporation in an ultrahigh vacuum environment to a thickness of several thousands of Angstroms. Conventional θ-2θ x-ray diffraction shows that only the Fe(222) peak is present, indicating that the films are oriented with the Fe(111) plane parallel to the Si(111) plane. Transmission electron microscopy shows that the Fe[11̄0] direction is parallel to the Si[11̄0] direction in the plane of the substrate.

AB - Epitaxial α-Fe films have been grown on HF cleaned Si(111) substrates at 30°C by electron beam evaporation in an ultrahigh vacuum environment to a thickness of several thousands of Angstroms. Conventional θ-2θ x-ray diffraction shows that only the Fe(222) peak is present, indicating that the films are oriented with the Fe(111) plane parallel to the Si(111) plane. Transmission electron microscopy shows that the Fe[11̄0] direction is parallel to the Si[11̄0] direction in the plane of the substrate.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Epitaxial growth of α-Fe films on Si(111) substrates

Abstract

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