Epitaxial growth of aluminum nitride on Si(111) by reactive sputtering

W. J. Meng, J. Heremans, Y. T. Cheng

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94 Scopus citations


We have studied growth of aluminum nitride (AlN) on Si(111) by ultra-high vacuum (UHV) reactive dc-magnetron sputtering under a mixture of Ar and N 2 gases. As-grown films have been examined by x-ray diffraction, Auger electron spectroscopy (AES), and transmission electron microscopy (TEM). Results of x-ray diffraction show texturing with AlN [0001]//Si[111]. Complementary TEM examinations observe epitaxy of AlN on Si(111), with AlN[112̄0]//Si[22̄0]. The AlN/Si interface is sharp and flat. The lowest substrate temperature required to achieve epitaxy Tepi has been determined to be ∼600°C. A dislocation density in AlN film grown at 700°C has been estimated to be ∼3×101 1/cm2.

Original languageEnglish
Pages (from-to)2097-2099
Number of pages3
JournalApplied Physics Letters
Issue number17
StatePublished - 1991

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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