Epitaxial growth of Fe/Mo/Fe(lll) and Fe/Cr/Fe(l11) on Si(lll)

Yang Tse Cheng, Yen Lune Chen

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


Epitaxial body-centered cubic Mo and Cr films have been grown on the (111) surface of α-Fe films on Si(lll) at 300 and 575 K by electron beam evaporation in ultrahigh vacuum. X-ray diffraction and transmission electron microscopy show that the Mo films are oriented with the (111) plane parallel to the a-Fe(lll) plane and with the Mo[110] direction parallel to the Fe[ 110] direction in the plane of the substrate. The same orientation relationship holds for the Cr films epitaxially grown on α-Fe(lll) surfaces. Epitaxial Fe(lll)/Mo(l11)/Fe(l11) and Fe(111)/Cr(111)/Fe(111) films have also been grown on Si(lll). This work provides new examples of low temperature epitaxy which can occur at a substrate temperature as low as 0.1 times the melting temperature of the deposited materials.

Original languageEnglish
Pages (from-to)1567-1571
Number of pages5
JournalJournal of Materials Research
Issue number7
StatePublished - Jul 1993

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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