Abstract
Epitaxial body-centered cubic Mo and Cr films have been grown on the (111) surface of α-Fe films on Si(lll) at 300 and 575 K by electron beam evaporation in ultrahigh vacuum. X-ray diffraction and transmission electron microscopy show that the Mo films are oriented with the (111) plane parallel to the a-Fe(lll) plane and with the Mo[110] direction parallel to the Fe[ 110] direction in the plane of the substrate. The same orientation relationship holds for the Cr films epitaxially grown on α-Fe(lll) surfaces. Epitaxial Fe(lll)/Mo(l11)/Fe(l11) and Fe(111)/Cr(111)/Fe(111) films have also been grown on Si(lll). This work provides new examples of low temperature epitaxy which can occur at a substrate temperature as low as 0.1 times the melting temperature of the deposited materials.
| Original language | English |
|---|---|
| Pages (from-to) | 1567-1571 |
| Number of pages | 5 |
| Journal | Journal of Materials Research |
| Volume | 8 |
| Issue number | 7 |
| DOIs | |
| State | Published - Jul 1993 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering