Abstract
Using an epitaxial α-Fe layer deposited on hydrogen-terminated Si (111) as a seed, epitaxial Mo layers have been grown on the (111) surface of α-Fe at 300 and 575 K by e-beam evaporation in UHV. The Mo (111) plane is parallel to the α-Fe (111) plane and the Mo [11̄0] direction is parallel to the Fe [11̄0] direction in the plane of the substrate.
Original language | English |
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Pages (from-to) | 192-197 |
Number of pages | 6 |
Journal | Materials Letters |
Volume | 15 |
Issue number | 3 |
DOIs | |
State | Published - Nov 1992 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering