Estimation of front and back junctions of CZTSe:Ge solar cells by combined modulus and impedance spectroscopy

Sanghyun Lee, Kent J. Price, Edgardo Saucedo

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We have fabricated and investigated CTSe:Ge bi-layer devices by modulus spectroscopy combined with impedance spectroscopy to understand the electrical properties of hetero- and back-contact junctions. The equivalent circuit model is developed to decouple the properties of each junction at different frequency ranges. Modeling and numerical simulations with the in-house MATLAB modeling suites connected to external simulators, such as Sentaurus TCAD and LEVM/LEVMW software are conducted to estimate the impact of each junction component to modulus and impedance spectroscopy with a parallel equivalent circuit combination of resistance and capacitance components. The fabricated devices show doping concentration of 6.4 1015/cm3, and the conversion efficiency is 8.1% based on capacitance-voltage and current-voltage characterization. From the characterization and modeling, the built-in potential of the hetero-junction is estimated as 801 meV, which is ∼10% smaller than the ideal case from TCAD, 894 meV. Conversely, the built-in potential of the back contact junction is 428 meV. The total apparent built-in potential is estimated to be 373 meV from the Mott-Schottky equation.

Original languageEnglish
Article number335501
JournalJournal of Physics D: Applied Physics
Volume54
Issue number33
DOIs
StatePublished - Aug 2021

Bibliographical note

Publisher Copyright:
© 2021 IOP Publishing Ltd.

Funding

This work was partially supported by Duke Energy Foundation, and CSRC at Indiana State University.

FundersFunder number
Duke Energy Foundation
Indiana State University
Colorado Society for Respiratory Care

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Acoustics and Ultrasonics
    • Surfaces, Coatings and Films

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