Abstract
We have fabricated and investigated CTSe:Ge bi-layer devices by modulus spectroscopy combined with impedance spectroscopy to understand the electrical properties of hetero- and back-contact junctions. The equivalent circuit model is developed to decouple the properties of each junction at different frequency ranges. Modeling and numerical simulations with the in-house MATLAB modeling suites connected to external simulators, such as Sentaurus TCAD and LEVM/LEVMW software are conducted to estimate the impact of each junction component to modulus and impedance spectroscopy with a parallel equivalent circuit combination of resistance and capacitance components. The fabricated devices show doping concentration of 6.4 1015/cm3, and the conversion efficiency is 8.1% based on capacitance-voltage and current-voltage characterization. From the characterization and modeling, the built-in potential of the hetero-junction is estimated as 801 meV, which is ∼10% smaller than the ideal case from TCAD, 894 meV. Conversely, the built-in potential of the back contact junction is 428 meV. The total apparent built-in potential is estimated to be 373 meV from the Mott-Schottky equation.
| Original language | English |
|---|---|
| Article number | 335501 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 54 |
| Issue number | 33 |
| DOIs | |
| State | Published - Aug 2021 |
Bibliographical note
Funding Information:This work was partially supported by Duke Energy Foundation, and CSRC at Indiana State University.
Publisher Copyright:
© 2021 IOP Publishing Ltd.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films