Evaluation of hetero and back contact junctions of CZTSe: Ge bilayers solar cells with Modulus Spectroscopy

Sanghyun Lee; Kent J. Price; Edgardo Saucedo

doi:10.1109/PVSC43889.2021.9519064

Evaluation of hetero and back contact junctions of CZTSe: Ge bilayers solar cells with Modulus Spectroscopy

Sanghyun Lee, Kent J. Price, Edgardo Saucedo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

We fabricated and analyzed CZTSe: Ge bi-layers solar cells to accurately evaluate the electrical structure at hetero and back contact junctions by modulus spectroscopy. Two separate built-in potentials of hetero and back contact junctions are extensively investigated to describe qualitative each junction model of CZTSe: Ge bilayers devices. Fabricated devices are analyzed with an equivalent circuit model, and LEVM/LEMW software resolved two different parallel circuit branch components. Modeling with LEVM/LEMW software accurately fits our model to modulus and impedance spectra in the given testing frequency domain. Using TCAD numerical simulations, we examine a variety of device models with a set of built-in potentials for appropriate parallel circuits with two capacitance and two resistance (R2=0.99). Our study shows that heterojunction built-in potential is 801 meV, which is 10 % smaller than a theoretical value, 894 meV. Conversely, the built-in potential of the back contact junction is 428 meV. Total built-in potential is 373 meV.

Original language	English
Title of host publication	2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021
Pages	403-405
Number of pages	3
ISBN (Electronic)	9781665419222
DOIs	https://doi.org/10.1109/PVSC43889.2021.9519064
State	Published - Jun 20 2021
Event	48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States Duration: Jun 20 2021 → Jun 25 2021

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Country/Territory	United States
City	Fort Lauderdale
Period	6/20/21 → 6/25/21

Bibliographical note

Funding Information:
ACKNOWLEDGEMENT Authors acknowledges the generous support by the Duke Energy Foundation and CSRC at Indiana State University.

Publisher Copyright:
© 2021 IEEE.

Keywords

built-in potential
CZTSe
Ge
Modulus spectroscopy

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC43889.2021.9519064

Cite this

@inproceedings{9df3e710cfc74cbda0043d1d1d17260e,

title = "Evaluation of hetero and back contact junctions of CZTSe: Ge bilayers solar cells with Modulus Spectroscopy",

abstract = "We fabricated and analyzed CZTSe: Ge bi-layers solar cells to accurately evaluate the electrical structure at hetero and back contact junctions by modulus spectroscopy. Two separate built-in potentials of hetero and back contact junctions are extensively investigated to describe qualitative each junction model of CZTSe: Ge bilayers devices. Fabricated devices are analyzed with an equivalent circuit model, and LEVM/LEMW software resolved two different parallel circuit branch components. Modeling with LEVM/LEMW software accurately fits our model to modulus and impedance spectra in the given testing frequency domain. Using TCAD numerical simulations, we examine a variety of device models with a set of built-in potentials for appropriate parallel circuits with two capacitance and two resistance (R2=0.99). Our study shows that heterojunction built-in potential is 801 meV, which is 10 % smaller than a theoretical value, 894 meV. Conversely, the built-in potential of the back contact junction is 428 meV. Total built-in potential is 373 meV.",

keywords = "built-in potential, CZTSe, Ge, Modulus spectroscopy",

author = "Sanghyun Lee and Price, {Kent J.} and Edgardo Saucedo",

note = "Funding Information: ACKNOWLEDGEMENT Authors acknowledges the generous support by the Duke Energy Foundation and CSRC at Indiana State University. Publisher Copyright: {\textcopyright} 2021 IEEE.; 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 ; Conference date: 20-06-2021 Through 25-06-2021",

year = "2021",

month = jun,

day = "20",

doi = "10.1109/PVSC43889.2021.9519064",

language = "English",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "403--405",

booktitle = "2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021",

}

Lee, S, Price, KJ & Saucedo, E 2021, Evaluation of hetero and back contact junctions of CZTSe: Ge bilayers solar cells with Modulus Spectroscopy. in 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 403-405, 48th IEEE Photovoltaic Specialists Conference, PVSC 2021, Fort Lauderdale, United States, 6/20/21. https://doi.org/10.1109/PVSC43889.2021.9519064

Evaluation of hetero and back contact junctions of CZTSe: Ge bilayers solar cells with Modulus Spectroscopy. / Lee, Sanghyun; Price, Kent J.; Saucedo, Edgardo.
2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. 2021. p. 403-405 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Evaluation of hetero and back contact junctions of CZTSe

T2 - 48th IEEE Photovoltaic Specialists Conference, PVSC 2021

AU - Lee, Sanghyun

AU - Price, Kent J.

AU - Saucedo, Edgardo

PY - 2021/6/20

Y1 - 2021/6/20

N2 - We fabricated and analyzed CZTSe: Ge bi-layers solar cells to accurately evaluate the electrical structure at hetero and back contact junctions by modulus spectroscopy. Two separate built-in potentials of hetero and back contact junctions are extensively investigated to describe qualitative each junction model of CZTSe: Ge bilayers devices. Fabricated devices are analyzed with an equivalent circuit model, and LEVM/LEMW software resolved two different parallel circuit branch components. Modeling with LEVM/LEMW software accurately fits our model to modulus and impedance spectra in the given testing frequency domain. Using TCAD numerical simulations, we examine a variety of device models with a set of built-in potentials for appropriate parallel circuits with two capacitance and two resistance (R2=0.99). Our study shows that heterojunction built-in potential is 801 meV, which is 10 % smaller than a theoretical value, 894 meV. Conversely, the built-in potential of the back contact junction is 428 meV. Total built-in potential is 373 meV.

AB - We fabricated and analyzed CZTSe: Ge bi-layers solar cells to accurately evaluate the electrical structure at hetero and back contact junctions by modulus spectroscopy. Two separate built-in potentials of hetero and back contact junctions are extensively investigated to describe qualitative each junction model of CZTSe: Ge bilayers devices. Fabricated devices are analyzed with an equivalent circuit model, and LEVM/LEMW software resolved two different parallel circuit branch components. Modeling with LEVM/LEMW software accurately fits our model to modulus and impedance spectra in the given testing frequency domain. Using TCAD numerical simulations, we examine a variety of device models with a set of built-in potentials for appropriate parallel circuits with two capacitance and two resistance (R2=0.99). Our study shows that heterojunction built-in potential is 801 meV, which is 10 % smaller than a theoretical value, 894 meV. Conversely, the built-in potential of the back contact junction is 428 meV. Total built-in potential is 373 meV.

KW - built-in potential

KW - CZTSe

KW - Ge

KW - Modulus spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=85115945786&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85115945786&partnerID=8YFLogxK

U2 - 10.1109/PVSC43889.2021.9519064

DO - 10.1109/PVSC43889.2021.9519064

M3 - Conference contribution

AN - SCOPUS:85115945786

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 403

EP - 405

BT - 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021

Y2 - 20 June 2021 through 25 June 2021

ER -

Evaluation of hetero and back contact junctions of CZTSe: Ge bilayers solar cells with Modulus Spectroscopy

Abstract

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Bibliographical note

Keywords

ASJC Scopus subject areas

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