We fabricated and analyzed CZTSe: Ge bi-layers solar cells to accurately evaluate the electrical structure at hetero and back contact junctions by modulus spectroscopy. Two separate built-in potentials of hetero and back contact junctions are extensively investigated to describe qualitative each junction model of CZTSe: Ge bilayers devices. Fabricated devices are analyzed with an equivalent circuit model, and LEVM/LEMW software resolved two different parallel circuit branch components. Modeling with LEVM/LEMW software accurately fits our model to modulus and impedance spectra in the given testing frequency domain. Using TCAD numerical simulations, we examine a variety of device models with a set of built-in potentials for appropriate parallel circuits with two capacitance and two resistance (R2=0.99). Our study shows that heterojunction built-in potential is 801 meV, which is 10 % smaller than a theoretical value, 894 meV. Conversely, the built-in potential of the back contact junction is 428 meV. Total built-in potential is 373 meV.
|Title of host publication||2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021|
|Number of pages||3|
|State||Published - Jun 20 2021|
|Event||48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States|
Duration: Jun 20 2021 → Jun 25 2021
|Name||Conference Record of the IEEE Photovoltaic Specialists Conference|
|Conference||48th IEEE Photovoltaic Specialists Conference, PVSC 2021|
|Period||6/20/21 → 6/25/21|
Bibliographical noteFunding Information:
ACKNOWLEDGEMENT Authors acknowledges the generous support by the Duke Energy Foundation and CSRC at Indiana State University.
© 2021 IEEE.
- built-in potential
- Modulus spectroscopy
ASJC Scopus subject areas
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering