Abstract
We fabricated and analyzed CZTSe: Ge bi-layers solar cells to accurately evaluate the electrical structure at hetero and back contact junctions by modulus spectroscopy. Two separate built-in potentials of hetero and back contact junctions are extensively investigated to describe qualitative each junction model of CZTSe: Ge bilayers devices. Fabricated devices are analyzed with an equivalent circuit model, and LEVM/LEMW software resolved two different parallel circuit branch components. Modeling with LEVM/LEMW software accurately fits our model to modulus and impedance spectra in the given testing frequency domain. Using TCAD numerical simulations, we examine a variety of device models with a set of built-in potentials for appropriate parallel circuits with two capacitance and two resistance (R2=0.99). Our study shows that heterojunction built-in potential is 801 meV, which is 10 % smaller than a theoretical value, 894 meV. Conversely, the built-in potential of the back contact junction is 428 meV. Total built-in potential is 373 meV.
Original language | English |
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Title of host publication | 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021 |
Pages | 403-405 |
Number of pages | 3 |
ISBN (Electronic) | 9781665419222 |
DOIs | |
State | Published - Jun 20 2021 |
Event | 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States Duration: Jun 20 2021 → Jun 25 2021 |
Publication series
Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
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ISSN (Print) | 0160-8371 |
Conference
Conference | 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 |
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Country/Territory | United States |
City | Fort Lauderdale |
Period | 6/20/21 → 6/25/21 |
Bibliographical note
Publisher Copyright:© 2021 IEEE.
Keywords
- CZTSe
- Ge
- Modulus spectroscopy
- built-in potential
ASJC Scopus subject areas
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering