Evidence for energy coupling from the Si-D vibration mode to the Si-Si and Si-O vibration modes at the SiO2/Si interface

Zhi Chen; Jun Guo; Pangleen Ong

doi:10.1063/1.1611623

Evidence for energy coupling from the Si-D vibration mode to the Si-Si and Si-O vibration modes at the SiO₂/Si interface

Zhi Chen, Jun Guo, Pangleen Ong

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The measurement of vibrational modes at the SiO₂/Si interface by Fourier-transform infrared spectrometry (FT-IR) was presented. The theory was found correct for the experiments of breaking Si-H/D bonds using scanning tunneling microscope where oxide was not involved. A difference of 27cm ^-1 was found between the single crystal Si sample and the amorphous Si sample.

Original language	English
Pages (from-to)	2151-2153
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	11
DOIs	https://doi.org/10.1063/1.1611623
State	Published - Sep 15 2003

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1611623

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title = "Evidence for energy coupling from the Si-D vibration mode to the Si-Si and Si-O vibration modes at the SiO2/Si interface",

abstract = "The measurement of vibrational modes at the SiO2/Si interface by Fourier-transform infrared spectrometry (FT-IR) was presented. The theory was found correct for the experiments of breaking Si-H/D bonds using scanning tunneling microscope where oxide was not involved. A difference of 27cm -1 was found between the single crystal Si sample and the amorphous Si sample.",

author = "Zhi Chen and Jun Guo and Pangleen Ong",

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doi = "10.1063/1.1611623",

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T1 - Evidence for energy coupling from the Si-D vibration mode to the Si-Si and Si-O vibration modes at the SiO2/Si interface

AU - Chen, Zhi

AU - Guo, Jun

AU - Ong, Pangleen

PY - 2003/9/15

Y1 - 2003/9/15

N2 - The measurement of vibrational modes at the SiO2/Si interface by Fourier-transform infrared spectrometry (FT-IR) was presented. The theory was found correct for the experiments of breaking Si-H/D bonds using scanning tunneling microscope where oxide was not involved. A difference of 27cm -1 was found between the single crystal Si sample and the amorphous Si sample.

AB - The measurement of vibrational modes at the SiO2/Si interface by Fourier-transform infrared spectrometry (FT-IR) was presented. The theory was found correct for the experiments of breaking Si-H/D bonds using scanning tunneling microscope where oxide was not involved. A difference of 27cm -1 was found between the single crystal Si sample and the amorphous Si sample.

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U2 - 10.1063/1.1611623

DO - 10.1063/1.1611623

M3 - Article

AN - SCOPUS:0142026392

SN - 0003-6951

VL - 83

SP - 2151

EP - 2153

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Evidence for energy coupling from the Si-D vibration mode to the Si-Si and Si-O vibration modes at the SiO₂/Si interface

Abstract

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