The measurement of vibrational modes at the SiO2/Si interface by Fourier-transform infrared spectrometry (FT-IR) was presented. The theory was found correct for the experiments of breaking Si-H/D bonds using scanning tunneling microscope where oxide was not involved. A difference of 27cm -1 was found between the single crystal Si sample and the amorphous Si sample.
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Sep 15 2003|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)