The authors designed special pn junctions to examine the recently discovered phonon-energy-coupling enhancement effect. They found that the breakdown voltage of the silicon substrate is increased by 0.3 V after rapid thermal process (RTP), whereas it remains the same for diodes annealed in furnace with the same parameters as those in RTP. The increase in breakdown voltage of silicon is caused neither by dopant redistribution nor increased contact resistance after RTP but due to its intrinsic properties, i.e., stronger Si-Si bonds. The strengthening of Si-Si bonds is caused by coupling of the phonon energy from silicon to thin oxide.
|Journal||Applied Physics Letters|
|State||Published - 2007|
Bibliographical noteFunding Information:
This research is supported by National Science Foundation (ECS-0093156 and EPS-0447479) and the Office of Vice President for Research, University of Kentucky.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)