Evidence of enhanced phonon-energy coupling in SiO2/Si

Pangleen Ong; Zhi Chen

doi:10.1063/1.2714197

Evidence of enhanced phonon-energy coupling in SiO₂/Si

Pangleen Ong, Zhi Chen

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The authors designed special pn junctions to examine the recently discovered phonon-energy-coupling enhancement effect. They found that the breakdown voltage of the silicon substrate is increased by 0.3 V after rapid thermal process (RTP), whereas it remains the same for diodes annealed in furnace with the same parameters as those in RTP. The increase in breakdown voltage of silicon is caused neither by dopant redistribution nor increased contact resistance after RTP but due to its intrinsic properties, i.e., stronger Si-Si bonds. The strengthening of Si-Si bonds is caused by coupling of the phonon energy from silicon to thin oxide.

Original language	English
Article number	113516
Journal	Applied Physics Letters
Volume	90
Issue number	11
DOIs	https://doi.org/10.1063/1.2714197
State	Published - 2007

Bibliographical note

Funding Information:
This research is supported by National Science Foundation (ECS-0093156 and EPS-0447479) and the Office of Vice President for Research, University of Kentucky.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2714197

Cite this

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title = "Evidence of enhanced phonon-energy coupling in SiO2/Si",

abstract = "The authors designed special pn junctions to examine the recently discovered phonon-energy-coupling enhancement effect. They found that the breakdown voltage of the silicon substrate is increased by 0.3 V after rapid thermal process (RTP), whereas it remains the same for diodes annealed in furnace with the same parameters as those in RTP. The increase in breakdown voltage of silicon is caused neither by dopant redistribution nor increased contact resistance after RTP but due to its intrinsic properties, i.e., stronger Si-Si bonds. The strengthening of Si-Si bonds is caused by coupling of the phonon energy from silicon to thin oxide.",

author = "Pangleen Ong and Zhi Chen",

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AU - Chen, Zhi

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PY - 2007

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N2 - The authors designed special pn junctions to examine the recently discovered phonon-energy-coupling enhancement effect. They found that the breakdown voltage of the silicon substrate is increased by 0.3 V after rapid thermal process (RTP), whereas it remains the same for diodes annealed in furnace with the same parameters as those in RTP. The increase in breakdown voltage of silicon is caused neither by dopant redistribution nor increased contact resistance after RTP but due to its intrinsic properties, i.e., stronger Si-Si bonds. The strengthening of Si-Si bonds is caused by coupling of the phonon energy from silicon to thin oxide.

AB - The authors designed special pn junctions to examine the recently discovered phonon-energy-coupling enhancement effect. They found that the breakdown voltage of the silicon substrate is increased by 0.3 V after rapid thermal process (RTP), whereas it remains the same for diodes annealed in furnace with the same parameters as those in RTP. The increase in breakdown voltage of silicon is caused neither by dopant redistribution nor increased contact resistance after RTP but due to its intrinsic properties, i.e., stronger Si-Si bonds. The strengthening of Si-Si bonds is caused by coupling of the phonon energy from silicon to thin oxide.

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