Examination of dibenzyl aluminum and gallium azides as potential precursors to AlN and GaN

Miguel Ángel Muñoz-Hernández, Drew Rutherford, Heli Tiainen, David A. Atwood

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


This publication summarizes our attempts to prepare precursor molecules of formula Bn2MN3-THF [where Bn = benzyl, M = Ga (3) and Al (8)] and to use them in the low-temperature synthesis of AlN and GaN. Compound 3 was prepared from Bn2GaCl-THF (2) and Me3SiN3. Compound 8 was obtained by a different route which requires the combination of Cl2AlN3 and BnMgCl in toluene. During the course of this work two new amides, [Bn2AlNMe2)2 (4) and Bn2AlN(SiMe3)2-THF (5) were prepared and structurally characterized by X-ray crystallography.

Original languageEnglish
Pages (from-to)103-107
Number of pages5
JournalJournal of Organometallic Chemistry
Issue number1
StatePublished - Jun 10 1999

Bibliographical note

Funding Information:
This work was supported by the National Science Foundation NSF-CAREER award (CHE 9625376), the donors of the Petroleum Research Fund (Grant 31901-AC3), administered by the American Chemical Society and the Office of Naval Research.


  • Aluminum
  • Azide
  • Benzyl
  • Gallium
  • Nitride

ASJC Scopus subject areas

  • Biochemistry
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Materials Chemistry


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