Examination of dibenzyl aluminum and gallium azides as potential precursors to AlN and GaN

Miguel Ángel Muñoz-Hernández; Drew Rutherford; Heli Tiainen; David A. Atwood

doi:10.1016/S0022-328X(98)01192-9

Examination of dibenzyl aluminum and gallium azides as potential precursors to AlN and GaN

Miguel Ángel Muñoz-Hernández, Drew Rutherford, Heli Tiainen, David A. Atwood

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

This publication summarizes our attempts to prepare precursor molecules of formula Bn₂MN₃-THF [where Bn = benzyl, M = Ga (3) and Al (8)] and to use them in the low-temperature synthesis of AlN and GaN. Compound 3 was prepared from Bn₂GaCl-THF (2) and Me₃SiN₃. Compound 8 was obtained by a different route which requires the combination of Cl₂AlN₃ and BnMgCl in toluene. During the course of this work two new amides, [Bn₂AlNMe₂)₂ (4) and Bn₂AlN(SiMe₃)₂-THF (5) were prepared and structurally characterized by X-ray crystallography.

Original language	English
Pages (from-to)	103-107
Number of pages	5
Journal	Journal of Organometallic Chemistry
Volume	582
Issue number	1
DOIs	https://doi.org/10.1016/S0022-328X(98)01192-9
State	Published - Jun 10 1999

Bibliographical note

Funding Information:
This work was supported by the National Science Foundation NSF-CAREER award (CHE 9625376), the donors of the Petroleum Research Fund (Grant 31901-AC3), administered by the American Chemical Society and the Office of Naval Research.

Funding

This work was supported by the National Science Foundation NSF-CAREER award (CHE 9625376), the donors of the Petroleum Research Fund (Grant 31901-AC3), administered by the American Chemical Society and the Office of Naval Research.

Funders	Funder number
National Science Foundation (NSF)	CHE 9625376
Office of Naval Research
American Chemical Society
American Chemical Society Petroleum Research Fund	31901-AC3

Keywords

Aluminum
Azide
Benzyl
Gallium
Nitride

ASJC Scopus subject areas

Biochemistry
Physical and Theoretical Chemistry
Organic Chemistry
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-328X(98)01192-9

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@article{6e33749ec9cb46adbbdd36dd62d9cf7d,

title = "Examination of dibenzyl aluminum and gallium azides as potential precursors to AlN and GaN",

abstract = "This publication summarizes our attempts to prepare precursor molecules of formula Bn2MN3-THF [where Bn = benzyl, M = Ga (3) and Al (8)] and to use them in the low-temperature synthesis of AlN and GaN. Compound 3 was prepared from Bn2GaCl-THF (2) and Me3SiN3. Compound 8 was obtained by a different route which requires the combination of Cl2AlN3 and BnMgCl in toluene. During the course of this work two new amides, [Bn2AlNMe2)2 (4) and Bn2AlN(SiMe3)2-THF (5) were prepared and structurally characterized by X-ray crystallography.",

keywords = "Aluminum, Azide, Benzyl, Gallium, Nitride",

author = "Mu{\~n}oz-Hern{\'a}ndez, \{Miguel {\'A}ngel\} and Drew Rutherford and Heli Tiainen and Atwood, \{David A.\}",

note = "Funding Information: This work was supported by the National Science Foundation NSF-CAREER award (CHE 9625376), the donors of the Petroleum Research Fund (Grant 31901-AC3), administered by the American Chemical Society and the Office of Naval Research. ",

year = "1999",

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doi = "10.1016/S0022-328X(98)01192-9",

language = "English",

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pages = "103--107",

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T1 - Examination of dibenzyl aluminum and gallium azides as potential precursors to AlN and GaN

AU - Muñoz-Hernández, Miguel Ángel

AU - Rutherford, Drew

AU - Tiainen, Heli

AU - Atwood, David A.

N1 - Funding Information: This work was supported by the National Science Foundation NSF-CAREER award (CHE 9625376), the donors of the Petroleum Research Fund (Grant 31901-AC3), administered by the American Chemical Society and the Office of Naval Research.

PY - 1999/6/10

Y1 - 1999/6/10

N2 - This publication summarizes our attempts to prepare precursor molecules of formula Bn2MN3-THF [where Bn = benzyl, M = Ga (3) and Al (8)] and to use them in the low-temperature synthesis of AlN and GaN. Compound 3 was prepared from Bn2GaCl-THF (2) and Me3SiN3. Compound 8 was obtained by a different route which requires the combination of Cl2AlN3 and BnMgCl in toluene. During the course of this work two new amides, [Bn2AlNMe2)2 (4) and Bn2AlN(SiMe3)2-THF (5) were prepared and structurally characterized by X-ray crystallography.

AB - This publication summarizes our attempts to prepare precursor molecules of formula Bn2MN3-THF [where Bn = benzyl, M = Ga (3) and Al (8)] and to use them in the low-temperature synthesis of AlN and GaN. Compound 3 was prepared from Bn2GaCl-THF (2) and Me3SiN3. Compound 8 was obtained by a different route which requires the combination of Cl2AlN3 and BnMgCl in toluene. During the course of this work two new amides, [Bn2AlNMe2)2 (4) and Bn2AlN(SiMe3)2-THF (5) were prepared and structurally characterized by X-ray crystallography.

KW - Aluminum

KW - Azide

KW - Benzyl

KW - Gallium

KW - Nitride

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SN - 0022-328X

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EP - 107

JO - Journal of Organometallic Chemistry

JF - Journal of Organometallic Chemistry

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Examination of dibenzyl aluminum and gallium azides as potential precursors to AlN and GaN

Abstract

Bibliographical note

Funding

Keywords

ASJC Scopus subject areas

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