Fabrication and characterization of metal-molecule-silicon devices

Adina Scott, David B. Janes, Chad Risko, Mark A. Ratner

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46 Scopus citations


Metal-molecule-silicon (MMSi) devices have been fabricated, electrically characterized, and analyzed. Molecular layers were grafted to n and p+ silicon by electrochemical reduction of para-substituted aryl-diazonium salts and characterized using standard surface analysis techniques; MMSi devices were then fabricated using traditional silicon (Si) processing methods combined with this surface modification. The measured current-voltage characteristics were strongly dependent on both substrate type and molecular head group. The device behavior was analyzed using a qualitative model considering semiconductor depletion effects and molecular dipole moments and frontier orbital energies.

Original languageEnglish
Article number033508
JournalApplied Physics Letters
Issue number3
StatePublished - 2007

Bibliographical note

Funding Information:
The authors would like to thank Dmitri Zemlyanov for XPS. This work is supported by NSF (ECE0506802) and NASA-URETI (NCC3-1363) by the Northwestern MRSEC (DMR-0076097) and NNI-NCN of the NSF and the MURI/DURINT of the DoD. One of the authors (A.S.) is supported by a NSF graduate research fellowship.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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