Abstract
Metal-molecule-silicon (MMSi) devices have been fabricated, electrically characterized, and analyzed. Molecular layers were grafted to n and p+ silicon by electrochemical reduction of para-substituted aryl-diazonium salts and characterized using standard surface analysis techniques; MMSi devices were then fabricated using traditional silicon (Si) processing methods combined with this surface modification. The measured current-voltage characteristics were strongly dependent on both substrate type and molecular head group. The device behavior was analyzed using a qualitative model considering semiconductor depletion effects and molecular dipole moments and frontier orbital energies.
Original language | English |
---|---|
Article number | 033508 |
Journal | Applied Physics Letters |
Volume | 91 |
Issue number | 3 |
DOIs | |
State | Published - 2007 |
Bibliographical note
Funding Information:The authors would like to thank Dmitri Zemlyanov for XPS. This work is supported by NSF (ECE0506802) and NASA-URETI (NCC3-1363) by the Northwestern MRSEC (DMR-0076097) and NNI-NCN of the NSF and the MURI/DURINT of the DoD. One of the authors (A.S.) is supported by a NSF graduate research fellowship.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)