Fabrication and characterization of metal-molecule-silicon devices

Adina Scott; David B. Janes; Chad Risko; Mark A. Ratner

doi:10.1063/1.2750516

Fabrication and characterization of metal-molecule-silicon devices

Adina Scott, David B. Janes, Chad Risko, Mark A. Ratner

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

Metal-molecule-silicon (MMSi) devices have been fabricated, electrically characterized, and analyzed. Molecular layers were grafted to n and p+ silicon by electrochemical reduction of para-substituted aryl-diazonium salts and characterized using standard surface analysis techniques; MMSi devices were then fabricated using traditional silicon (Si) processing methods combined with this surface modification. The measured current-voltage characteristics were strongly dependent on both substrate type and molecular head group. The device behavior was analyzed using a qualitative model considering semiconductor depletion effects and molecular dipole moments and frontier orbital energies.

Original language	English
Article number	033508
Journal	Applied Physics Letters
Volume	91
Issue number	3
DOIs	https://doi.org/10.1063/1.2750516
State	Published - 2007

Bibliographical note

Funding Information:
The authors would like to thank Dmitri Zemlyanov for XPS. This work is supported by NSF (ECE0506802) and NASA-URETI (NCC3-1363) by the Northwestern MRSEC (DMR-0076097) and NNI-NCN of the NSF and the MURI/DURINT of the DoD. One of the authors (A.S.) is supported by a NSF graduate research fellowship.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Fabrication and characterization of metal-molecule-silicon devices",

abstract = "Metal-molecule-silicon (MMSi) devices have been fabricated, electrically characterized, and analyzed. Molecular layers were grafted to n and p+ silicon by electrochemical reduction of para-substituted aryl-diazonium salts and characterized using standard surface analysis techniques; MMSi devices were then fabricated using traditional silicon (Si) processing methods combined with this surface modification. The measured current-voltage characteristics were strongly dependent on both substrate type and molecular head group. The device behavior was analyzed using a qualitative model considering semiconductor depletion effects and molecular dipole moments and frontier orbital energies.",

author = "Adina Scott and Janes, {David B.} and Chad Risko and Ratner, {Mark A.}",

note = "Funding Information: The authors would like to thank Dmitri Zemlyanov for XPS. This work is supported by NSF (ECE0506802) and NASA-URETI (NCC3-1363) by the Northwestern MRSEC (DMR-0076097) and NNI-NCN of the NSF and the MURI/DURINT of the DoD. One of the authors (A.S.) is supported by a NSF graduate research fellowship.",

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doi = "10.1063/1.2750516",

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AU - Scott, Adina

AU - Janes, David B.

AU - Risko, Chad

AU - Ratner, Mark A.

N1 - Funding Information: The authors would like to thank Dmitri Zemlyanov for XPS. This work is supported by NSF (ECE0506802) and NASA-URETI (NCC3-1363) by the Northwestern MRSEC (DMR-0076097) and NNI-NCN of the NSF and the MURI/DURINT of the DoD. One of the authors (A.S.) is supported by a NSF graduate research fellowship.

PY - 2007

Y1 - 2007

N2 - Metal-molecule-silicon (MMSi) devices have been fabricated, electrically characterized, and analyzed. Molecular layers were grafted to n and p+ silicon by electrochemical reduction of para-substituted aryl-diazonium salts and characterized using standard surface analysis techniques; MMSi devices were then fabricated using traditional silicon (Si) processing methods combined with this surface modification. The measured current-voltage characteristics were strongly dependent on both substrate type and molecular head group. The device behavior was analyzed using a qualitative model considering semiconductor depletion effects and molecular dipole moments and frontier orbital energies.

AB - Metal-molecule-silicon (MMSi) devices have been fabricated, electrically characterized, and analyzed. Molecular layers were grafted to n and p+ silicon by electrochemical reduction of para-substituted aryl-diazonium salts and characterized using standard surface analysis techniques; MMSi devices were then fabricated using traditional silicon (Si) processing methods combined with this surface modification. The measured current-voltage characteristics were strongly dependent on both substrate type and molecular head group. The device behavior was analyzed using a qualitative model considering semiconductor depletion effects and molecular dipole moments and frontier orbital energies.

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Fabrication and characterization of metal-molecule-silicon devices

Abstract

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