Fabrication and characterization of metal-molecule-silicon devices

Adina Scott, David B. Janes, Chad Risko, Mark A. Ratner

Research output: Contribution to journalArticlepeer-review

46 Scopus citations

Abstract

Metal-molecule-silicon (MMSi) devices have been fabricated, electrically characterized, and analyzed. Molecular layers were grafted to n and p+ silicon by electrochemical reduction of para-substituted aryl-diazonium salts and characterized using standard surface analysis techniques; MMSi devices were then fabricated using traditional silicon (Si) processing methods combined with this surface modification. The measured current-voltage characteristics were strongly dependent on both substrate type and molecular head group. The device behavior was analyzed using a qualitative model considering semiconductor depletion effects and molecular dipole moments and frontier orbital energies.

Original languageEnglish
Article number033508
JournalApplied Physics Letters
Volume91
Issue number3
DOIs
StatePublished - 2007

Bibliographical note

Funding Information:
The authors would like to thank Dmitri Zemlyanov for XPS. This work is supported by NSF (ECE0506802) and NASA-URETI (NCC3-1363) by the Northwestern MRSEC (DMR-0076097) and NNI-NCN of the NSF and the MURI/DURINT of the DoD. One of the authors (A.S.) is supported by a NSF graduate research fellowship.

Funding

The authors would like to thank Dmitri Zemlyanov for XPS. This work is supported by NSF (ECE0506802) and NASA-URETI (NCC3-1363) by the Northwestern MRSEC (DMR-0076097) and NNI-NCN of the NSF and the MURI/DURINT of the DoD. One of the authors (A.S.) is supported by a NSF graduate research fellowship.

FundersFunder number
NASA-URETINCC3-1363
NNI-NCN
Northwestern MRSECDMR-0076097
U.S. Department of Energy Chinese Academy of Sciences Guangzhou Municipal Science and Technology Project Oak Ridge National Laboratory Extreme Science and Engineering Discovery Environment National Science Foundation National Energy Research Scientific Computing Center National Natural Science Foundation of ChinaECE0506802
U.S. Department of Energy Chinese Academy of Sciences Guangzhou Municipal Science and Technology Project Oak Ridge National Laboratory Extreme Science and Engineering Discovery Environment National Science Foundation National Energy Research Scientific Computing Center National Natural Science Foundation of China
U.S. Department of Defense

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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