Field-effect transistors made by functionalized pentacene with logic gate applications

J. G. Park, R. Vasic, J. S. Brooks, J. E. Anthony

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


Funtionalized pentacene, 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), field-effect transistors (FET) were made by thermal evaporation or solution deposition methods and the temperature dependent mobility was measured. The field-effect mobility (μ FET) activation energy is gate voltage dependent. At low gate voltage, activated conduction is dominant with E a ∼ 0.27 eV, slightly smaller than the bulk value, and the activation energy decreases with increasing gate voltage. This is ascribed to traps in the film. A non-monotonic temperature dependence is observed at high gate voltage (V G < -30 V) with E a ∼ 60 - 170 meV at lower temperatures below the mobility maximum. Realization of simple logic gate circuits such as NOT (inverter), NOR, and NAND is demonstrated.

Original languageEnglish
Pages (from-to)391-396
Number of pages6
JournalJournal of Low Temperature Physics
Issue number3-4
StatePublished - Feb 2006


  • 72.20 Jv
  • 72.80 Le
  • 73.61 Ph

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • General Materials Science
  • Condensed Matter Physics


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