Finite element analysis and experimental verification of SOI waveguide bending loss

H. Srinivasan; B. Bommalakunta; A. Chamberlain; J. T. Hastings

doi:10.1002/mop.24135

Finite element analysis and experimental verification of SOI waveguide bending loss

H. Srinivasan, B. Bommalakunta, A. Chamberlain, J. T. Hastings

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Bending and transition losses in silicon-on-insulator rib waveguides were calculated using finite-element analysis of equivalent straight waveguides with perfectly matched boundary layers. Experimental loss measurements of silicon-on-insulator waveguides with various bend radii reveal that this technique accurately predicts loss and minimum bend radius for efficient design.

Original language	English
Pages (from-to)	699-702
Number of pages	4
Journal	Microwave and Optical Technology Letters
Volume	51
Issue number	3
DOIs	https://doi.org/10.1002/mop.24135
State	Published - Mar 2009

Keywords

Bending loss
Equivalent straight waveguide
Finite element analysis
Silicon-on-insulator waveguides
Transition loss

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1002/mop.24135

Cite this

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title = "Finite element analysis and experimental verification of SOI waveguide bending loss",

abstract = "Bending and transition losses in silicon-on-insulator rib waveguides were calculated using finite-element analysis of equivalent straight waveguides with perfectly matched boundary layers. Experimental loss measurements of silicon-on-insulator waveguides with various bend radii reveal that this technique accurately predicts loss and minimum bend radius for efficient design.",

keywords = "Bending loss, Equivalent straight waveguide, Finite element analysis, Silicon-on-insulator waveguides, Transition loss",

author = "H. Srinivasan and B. Bommalakunta and A. Chamberlain and Hastings, {J. T.}",

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T1 - Finite element analysis and experimental verification of SOI waveguide bending loss

AU - Srinivasan, H.

AU - Bommalakunta, B.

AU - Chamberlain, A.

AU - Hastings, J. T.

PY - 2009/3

Y1 - 2009/3

N2 - Bending and transition losses in silicon-on-insulator rib waveguides were calculated using finite-element analysis of equivalent straight waveguides with perfectly matched boundary layers. Experimental loss measurements of silicon-on-insulator waveguides with various bend radii reveal that this technique accurately predicts loss and minimum bend radius for efficient design.

AB - Bending and transition losses in silicon-on-insulator rib waveguides were calculated using finite-element analysis of equivalent straight waveguides with perfectly matched boundary layers. Experimental loss measurements of silicon-on-insulator waveguides with various bend radii reveal that this technique accurately predicts loss and minimum bend radius for efficient design.

KW - Bending loss

KW - Equivalent straight waveguide

KW - Finite element analysis

KW - Silicon-on-insulator waveguides

KW - Transition loss

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U2 - 10.1002/mop.24135

DO - 10.1002/mop.24135

M3 - Article

AN - SCOPUS:62449098665

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EP - 702

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 3

ER -

Finite element analysis and experimental verification of SOI waveguide bending loss

Abstract

Keywords

ASJC Scopus subject areas

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