Focused electron beam induced deposition of copper with high resolution and purity from aqueous solutions

Samaneh Esfandiarpour; Lindsay Boehme; J. Todd Hastings

doi:10.1088/1361-6528/aa5a4a

Focused electron beam induced deposition of copper with high resolution and purity from aqueous solutions

Samaneh Esfandiarpour
, Lindsay Boehme
, J. Todd Hastings

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Electron-beam induced deposition of high-purity copper nanostructures is desirable for nanoscale rapid prototyping, interconnection of chemically synthesized structures, and integrated circuit editing. However, metalorganic, gas-phase precursors for copper introduce high levels of carbon contamination. Here we demonstrate electron beam induced deposition of high-purity copper nanostructures from aqueous solutions of copper sulfate. The addition of sulfuric acid eliminates oxygen contamination from the deposit and produces a deposit with ∼95 at% copper. The addition of sodium dodecyl sulfate (SDS), Triton X-100, or polyethylene glycole (PEG) improves pattern resolution and controls deposit morphology but leads to slightly reduced purity. High resolution nested lines with a 100 nm pitch are obtained from CuSO₄-H₂SO₄-SDS-H₂O. Higher aspect ratios (∼1:1) with reduced line edge roughness and unintended deposition are obtained from CuSO₄-H₂SO₄-PEG-H₂O. Evidence for radiation-chemical deposition mechanisms was observed, including deposition efficiency as high as 1.4 primary electrons/Cu atom.

Original language	English
Article number	125301
Journal	Nanotechnology
Volume	28
Issue number	12
DOIs	https://doi.org/10.1088/1361-6528/aa5a4a
State	Published - Feb 21 2017

Bibliographical note

Publisher Copyright:
© 2017 IOP Publishing Ltd.

Funding

This material is based upon work supported by the National Science Foundation under Grant Numbers CMMI-1125998, CMMI-1538650, and ECCS-1542164. The authors thank Professor Kathleen Dunn, SUNY Polytechnic Institute, for providing the electrodeposited copper samples.

Funders	Funder number
SUNY Polytechnic Institute
U.S. Department of Energy Chinese Academy of Sciences Guangzhou Municipal Science and Technology Project Oak Ridge National Laboratory Extreme Science and Engineering Discovery Environment National Science Foundation National Energy Research Scientific Computing Center National Natural Science Foundation of China	CMMI-1125998, CMMI-1538650, 1125998, ECCS-1542164
U.S. Department of Energy Chinese Academy of Sciences Guangzhou Municipal Science and Technology Project Oak Ridge National Laboratory Extreme Science and Engineering Discovery Environment National Science Foundation National Energy Research Scientific Computing Center National Natural Science Foundation of China

Keywords

FEBID
copper deposition
direct write nanofabrication
electron beam induced process
liquid phase

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

Access to Document

10.1088/1361-6528/aa5a4a

Cite this

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abstract = "Electron-beam induced deposition of high-purity copper nanostructures is desirable for nanoscale rapid prototyping, interconnection of chemically synthesized structures, and integrated circuit editing. However, metalorganic, gas-phase precursors for copper introduce high levels of carbon contamination. Here we demonstrate electron beam induced deposition of high-purity copper nanostructures from aqueous solutions of copper sulfate. The addition of sulfuric acid eliminates oxygen contamination from the deposit and produces a deposit with ∼95 at\% copper. The addition of sodium dodecyl sulfate (SDS), Triton X-100, or polyethylene glycole (PEG) improves pattern resolution and controls deposit morphology but leads to slightly reduced purity. High resolution nested lines with a 100 nm pitch are obtained from CuSO4-H2SO4-SDS-H2O. Higher aspect ratios (∼1:1) with reduced line edge roughness and unintended deposition are obtained from CuSO4-H2SO4-PEG-H2O. Evidence for radiation-chemical deposition mechanisms was observed, including deposition efficiency as high as 1.4 primary electrons/Cu atom.",

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N2 - Electron-beam induced deposition of high-purity copper nanostructures is desirable for nanoscale rapid prototyping, interconnection of chemically synthesized structures, and integrated circuit editing. However, metalorganic, gas-phase precursors for copper introduce high levels of carbon contamination. Here we demonstrate electron beam induced deposition of high-purity copper nanostructures from aqueous solutions of copper sulfate. The addition of sulfuric acid eliminates oxygen contamination from the deposit and produces a deposit with ∼95 at% copper. The addition of sodium dodecyl sulfate (SDS), Triton X-100, or polyethylene glycole (PEG) improves pattern resolution and controls deposit morphology but leads to slightly reduced purity. High resolution nested lines with a 100 nm pitch are obtained from CuSO4-H2SO4-SDS-H2O. Higher aspect ratios (∼1:1) with reduced line edge roughness and unintended deposition are obtained from CuSO4-H2SO4-PEG-H2O. Evidence for radiation-chemical deposition mechanisms was observed, including deposition efficiency as high as 1.4 primary electrons/Cu atom.

AB - Electron-beam induced deposition of high-purity copper nanostructures is desirable for nanoscale rapid prototyping, interconnection of chemically synthesized structures, and integrated circuit editing. However, metalorganic, gas-phase precursors for copper introduce high levels of carbon contamination. Here we demonstrate electron beam induced deposition of high-purity copper nanostructures from aqueous solutions of copper sulfate. The addition of sulfuric acid eliminates oxygen contamination from the deposit and produces a deposit with ∼95 at% copper. The addition of sodium dodecyl sulfate (SDS), Triton X-100, or polyethylene glycole (PEG) improves pattern resolution and controls deposit morphology but leads to slightly reduced purity. High resolution nested lines with a 100 nm pitch are obtained from CuSO4-H2SO4-SDS-H2O. Higher aspect ratios (∼1:1) with reduced line edge roughness and unintended deposition are obtained from CuSO4-H2SO4-PEG-H2O. Evidence for radiation-chemical deposition mechanisms was observed, including deposition efficiency as high as 1.4 primary electrons/Cu atom.

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Focused electron beam induced deposition of copper with high resolution and purity from aqueous solutions

Abstract

Bibliographical note

Funding

Keywords

ASJC Scopus subject areas

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