Focused electron beam induced etching of copper in sulfuric acid solutions

Lindsay Boehme; Matthew Bresin; Aurélien Botman; James Ranney; J. Todd Hastings

doi:10.1088/0957-4484/26/49/495301

Focused electron beam induced etching of copper in sulfuric acid solutions

Lindsay Boehme, Matthew Bresin, Aurélien Botman, James Ranney, J. Todd Hastings

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We show here that copper can be locally etched by an electron-beam induced reaction in a liquid. Aqueous sulfuric acid (H₂SO₄) is utilized as the etchant and all experiments are conducted in an environmental scanning electron microscope. The extent of etch increases with liquid thickness and dose, and etch resolution improves with H₂SO₄ concentration. This approach shows the feasibility of liquid phase etching for material selectivity and has the potential for circuit editing.

Original language	English
Article number	495301
Journal	Nanotechnology
Volume	26
Issue number	49
DOIs	https://doi.org/10.1088/0957-4484/26/49/495301
State	Published - Nov 16 2015

Bibliographical note

Publisher Copyright:
© 2015 IOP Publishing Ltd.

Keywords

circuit edit
copper
e-beam induced etching
etch selectivity
liquid phase electron-beam induced processing
sulfuric acid

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/26/49/495301

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abstract = "We show here that copper can be locally etched by an electron-beam induced reaction in a liquid. Aqueous sulfuric acid (H2SO4) is utilized as the etchant and all experiments are conducted in an environmental scanning electron microscope. The extent of etch increases with liquid thickness and dose, and etch resolution improves with H2SO4 concentration. This approach shows the feasibility of liquid phase etching for material selectivity and has the potential for circuit editing.",

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AU - Boehme, Lindsay

AU - Bresin, Matthew

AU - Botman, Aurélien

AU - Ranney, James

AU - Hastings, J. Todd

PY - 2015/11/16

Y1 - 2015/11/16

N2 - We show here that copper can be locally etched by an electron-beam induced reaction in a liquid. Aqueous sulfuric acid (H2SO4) is utilized as the etchant and all experiments are conducted in an environmental scanning electron microscope. The extent of etch increases with liquid thickness and dose, and etch resolution improves with H2SO4 concentration. This approach shows the feasibility of liquid phase etching for material selectivity and has the potential for circuit editing.

AB - We show here that copper can be locally etched by an electron-beam induced reaction in a liquid. Aqueous sulfuric acid (H2SO4) is utilized as the etchant and all experiments are conducted in an environmental scanning electron microscope. The extent of etch increases with liquid thickness and dose, and etch resolution improves with H2SO4 concentration. This approach shows the feasibility of liquid phase etching for material selectivity and has the potential for circuit editing.

KW - circuit edit

KW - copper

KW - e-beam induced etching

KW - etch selectivity

KW - liquid phase electron-beam induced processing

KW - sulfuric acid

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Focused electron beam induced etching of copper in sulfuric acid solutions

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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