TY - JOUR
T1 - Formation of twins during epitaxial growth of -iron films on silicon (111)
AU - Cheng, Yang Tse
AU - Chen, Yen Lung
AU - Meng, Wen Jin
AU - Li, Yang
PY - 1993
Y1 - 1993
N2 - Since the initial report on the epitaxial growth of -Fe films on hydrogen-terminated Si(111) surfaces at 300 K, two in-plane orientation relationships, twinned and aligned epitaxy, have been suggested. In this paper, the epitaxial growth of Fe on Si(111) is further examined in detail by x-ray-diffraction -2 scans, x-ray-diffraction scans, transmission electron microscopy, and reflection high-energy electron diffraction. Twinned epitaxy at the Fe/Si interface is established, i.e., (111)-Fe(111)Si and [110]-Fe[110]Si. As the film thickness increases, the formation of twins in the epitaxial -Fe films is observed. The apparent aligned epitaxy is the result of twinning in the -Fe film. The formation of twins in the epitaxial -Fe film is attributed to the limited mobility at 300 K. The dominance of twinned epitaxy at the interface suggests that the influence of the second-nearest-neighbor interaction between Fe and Si atoms near the interface is important.
AB - Since the initial report on the epitaxial growth of -Fe films on hydrogen-terminated Si(111) surfaces at 300 K, two in-plane orientation relationships, twinned and aligned epitaxy, have been suggested. In this paper, the epitaxial growth of Fe on Si(111) is further examined in detail by x-ray-diffraction -2 scans, x-ray-diffraction scans, transmission electron microscopy, and reflection high-energy electron diffraction. Twinned epitaxy at the Fe/Si interface is established, i.e., (111)-Fe(111)Si and [110]-Fe[110]Si. As the film thickness increases, the formation of twins in the epitaxial -Fe films is observed. The apparent aligned epitaxy is the result of twinning in the -Fe film. The formation of twins in the epitaxial -Fe film is attributed to the limited mobility at 300 K. The dominance of twinned epitaxy at the interface suggests that the influence of the second-nearest-neighbor interaction between Fe and Si atoms near the interface is important.
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U2 - 10.1103/PhysRevB.48.14729
DO - 10.1103/PhysRevB.48.14729
M3 - Article
AN - SCOPUS:24844478867
VL - 48
SP - 14729
EP - 14732
IS - 19
ER -