Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices

Kangguo Cheng; Jinju Lee; Zhi Chen; Samir A. Shah; Karl Hess; Jean Pierre Leburton; Joseph W. Lyding

doi:10.1116/1.1385687

Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices

Kangguo Cheng, Jinju Lee, Zhi Chen, Samir A. Shah, Karl Hess, Jean Pierre Leburton, Joseph W. Lyding

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

The fundamental connection between desorption of H/D at silicon surfaces and at oxide/silicon interfaces was addressed. Multiple heating vibrational mechanism played an important role for hot-carrier-induced desorption of H/D at the interface in deep submicron devices. The results support the hypothesis of Si-H(D) bond strength variation at the oxide/silicon interfaces.

Original language	English
Pages (from-to)	1119-1123
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	4
DOIs	https://doi.org/10.1116/1.1385687
State	Published - Jul 2001
Event	19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States Duration: Oct 15 2000 → Oct 18 2000

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1385687

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Cheng, K., Lee, J., Chen, Z., Shah, S. A., Hess, K., Leburton, J. P., & Lyding, J. W. (2001). Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19(4), 1119-1123. https://doi.org/10.1116/1.1385687

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title = "Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices",

abstract = "The fundamental connection between desorption of H/D at silicon surfaces and at oxide/silicon interfaces was addressed. Multiple heating vibrational mechanism played an important role for hot-carrier-induced desorption of H/D at the interface in deep submicron devices. The results support the hypothesis of Si-H(D) bond strength variation at the oxide/silicon interfaces.",

author = "Kangguo Cheng and Jinju Lee and Zhi Chen and Shah, {Samir A.} and Karl Hess and Leburton, {Jean Pierre} and Lyding, {Joseph W.}",

year = "2001",

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language = "English",

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Cheng, K, Lee, J, Chen, Z, Shah, SA, Hess, K, Leburton, JP & Lyding, JW 2001, 'Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 19, no. 4, pp. 1119-1123. https://doi.org/10.1116/1.1385687

Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices. / Cheng, Kangguo; Lee, Jinju; Chen, Zhi et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 4, 07.2001, p. 1119-1123.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices

AU - Cheng, Kangguo

AU - Lee, Jinju

AU - Chen, Zhi

AU - Shah, Samir A.

AU - Hess, Karl

AU - Leburton, Jean Pierre

AU - Lyding, Joseph W.

PY - 2001/7

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AB - The fundamental connection between desorption of H/D at silicon surfaces and at oxide/silicon interfaces was addressed. Multiple heating vibrational mechanism played an important role for hot-carrier-induced desorption of H/D at the interface in deep submicron devices. The results support the hypothesis of Si-H(D) bond strength variation at the oxide/silicon interfaces.

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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T2 - 19th North American Conference on Molecular Beam Epitaxy (NAMBE-19)

Y2 - 15 October 2000 through 18 October 2000

ER -

Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices

Abstract

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