Fundamental mechanisms for reduction of leakage current of silicon oxide and oxynitride through RTP-induced phonon-energy coupling

Zhi Chen, Jun Guo, Pangleen Ong

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We study the fundamental mechanisms for dramatic reduction of leakage current of silicon oxide caused by the RTP-induced phonon-energy coupling enhancement (PECE). It is shown that the Si-D bonds are strengthened after RTP and deuterium anneal through characterization of hot-electron degradation of MOS transistors. The Si-O bonds are strengthened because the breakdown voltage of silicon oxide is increased after RTP. We also designed special pn junctions to examine Si-Si bonds. We found that the breakdown voltage of the silicon substrate is increased by 0.3 V after RTP anneal whereas it remains the same for diodes annealed in furnace with the same parameters as in RTP. The increase in breakdown voltage of silicon is due to its intrinsic properties, i.e. stronger SiSi bonds. The strengthening of Si-Si bonds is caused by coupling of phonon energy from silicon to thin oxide.

Original languageEnglish
Title of host publication14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006
Pages111-115
Number of pages5
DOIs
StatePublished - 2006
Event14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006 - Kyoto, Japan
Duration: Oct 10 2006Oct 13 2006

Publication series

Name14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006

Conference

Conference14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006
Country/TerritoryJapan
CityKyoto
Period10/10/0610/13/06

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

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