TY - GEN
T1 - Fundamental mechanisms for reduction of leakage current of silicon oxide and oxynitride through RTP-induced phonon-energy coupling
AU - Chen, Zhi
AU - Guo, Jun
AU - Ong, Pangleen
PY - 2006
Y1 - 2006
N2 - We study the fundamental mechanisms for dramatic reduction of leakage current of silicon oxide caused by the RTP-induced phonon-energy coupling enhancement (PECE). It is shown that the Si-D bonds are strengthened after RTP and deuterium anneal through characterization of hot-electron degradation of MOS transistors. The Si-O bonds are strengthened because the breakdown voltage of silicon oxide is increased after RTP. We also designed special pn junctions to examine Si-Si bonds. We found that the breakdown voltage of the silicon substrate is increased by 0.3 V after RTP anneal whereas it remains the same for diodes annealed in furnace with the same parameters as in RTP. The increase in breakdown voltage of silicon is due to its intrinsic properties, i.e. stronger SiSi bonds. The strengthening of Si-Si bonds is caused by coupling of phonon energy from silicon to thin oxide.
AB - We study the fundamental mechanisms for dramatic reduction of leakage current of silicon oxide caused by the RTP-induced phonon-energy coupling enhancement (PECE). It is shown that the Si-D bonds are strengthened after RTP and deuterium anneal through characterization of hot-electron degradation of MOS transistors. The Si-O bonds are strengthened because the breakdown voltage of silicon oxide is increased after RTP. We also designed special pn junctions to examine Si-Si bonds. We found that the breakdown voltage of the silicon substrate is increased by 0.3 V after RTP anneal whereas it remains the same for diodes annealed in furnace with the same parameters as in RTP. The increase in breakdown voltage of silicon is due to its intrinsic properties, i.e. stronger SiSi bonds. The strengthening of Si-Si bonds is caused by coupling of phonon energy from silicon to thin oxide.
UR - http://www.scopus.com/inward/record.url?scp=48349110197&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=48349110197&partnerID=8YFLogxK
U2 - 10.1109/RTP.2006.367989
DO - 10.1109/RTP.2006.367989
M3 - Conference contribution
AN - SCOPUS:48349110197
SN - 142440648X
SN - 9781424406487
T3 - 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006
SP - 111
EP - 115
BT - 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006
T2 - 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006
Y2 - 10 October 2006 through 13 October 2006
ER -