GaAs metal-insulator-semiconductor structure and field effect transistors grown by ex-situ approach

Zhi Chen; S. Noor Mohammad

doi:10.1049/el:19971276

GaAs metal-insulator-semiconductor structure and field effect transistors grown by ex-situ approach

Zhi Chen, S. Noor Mohammad

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A high quality Si₃N₄/Si//p-GaAs MIS structure has been obtained by the ex-situ growth approach. An interface trap density as low as 9 × 10¹⁰eV^-1cm^-2 was obtained from the conductance measurements. A depletion-mode MISFET with a transconductance of 85mS/mm has been fabricated using this exsitu growth approach.

Original language	English
Pages (from-to)	1906-1907
Number of pages	2
Journal	Electronics Letters
Volume	33
Issue number	22
DOIs	https://doi.org/10.1049/el:19971276
State	Published - Oct 23 1997

Keywords

Metal-insulator-semiconductor devices
Molecular beam epitaxy

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19971276

Cite this

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title = "GaAs metal-insulator-semiconductor structure and field effect transistors grown by ex-situ approach",

abstract = "A high quality Si3N4/Si//p-GaAs MIS structure has been obtained by the ex-situ growth approach. An interface trap density as low as 9 × 1010eV-1cm-2 was obtained from the conductance measurements. A depletion-mode MISFET with a transconductance of 85mS/mm has been fabricated using this exsitu growth approach.",

keywords = "Metal-insulator-semiconductor devices, Molecular beam epitaxy",

author = "Zhi Chen and Mohammad, {S. Noor}",

year = "1997",

month = oct,

day = "23",

doi = "10.1049/el:19971276",

language = "English",

volume = "33",

pages = "1906--1907",

number = "22",

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TY - JOUR

T1 - GaAs metal-insulator-semiconductor structure and field effect transistors grown by ex-situ approach

AU - Chen, Zhi

AU - Mohammad, S. Noor

PY - 1997/10/23

Y1 - 1997/10/23

N2 - A high quality Si3N4/Si//p-GaAs MIS structure has been obtained by the ex-situ growth approach. An interface trap density as low as 9 × 1010eV-1cm-2 was obtained from the conductance measurements. A depletion-mode MISFET with a transconductance of 85mS/mm has been fabricated using this exsitu growth approach.

AB - A high quality Si3N4/Si//p-GaAs MIS structure has been obtained by the ex-situ growth approach. An interface trap density as low as 9 × 1010eV-1cm-2 was obtained from the conductance measurements. A depletion-mode MISFET with a transconductance of 85mS/mm has been fabricated using this exsitu growth approach.

KW - Metal-insulator-semiconductor devices

KW - Molecular beam epitaxy

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UR - http://www.scopus.com/inward/citedby.url?scp=0031245459&partnerID=8YFLogxK

U2 - 10.1049/el:19971276

DO - 10.1049/el:19971276

M3 - Article

AN - SCOPUS:0031245459

SN - 0013-5194

VL - 33

SP - 1906

EP - 1907

JO - Electronics Letters

JF - Electronics Letters

IS - 22

ER -

GaAs metal-insulator-semiconductor structure and field effect transistors grown by ex-situ approach

Abstract

Keywords

ASJC Scopus subject areas

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