Grain Boundary Induced Bias Instability in Soluble Acene-Based Thin-Film Transistors

Engineering

• Characteristics 18%
• Crystallographic Orientation 9%
• Density 45%
• Development 9%
• Device Performance 9%
• Dielectrics 18%
• Event 9%
• Field Effect Transistors 9%
• Grain Boundaries 100%
• Induced Charge 9%
• Mixing Time 9%
• Organic Field Effect Transistors 27%
• Organic Semiconductor 9%
• Performance 9%
• Semiconductor Material 18%
• Significant Increase 9%
• Spherulites 18%
• Surface 9%
• Thin Films 27%
• Thin-Film Transistor 100%

Material Science

• Aggregate 9%
• Charge Trapping 27%
• Crystallization 9%
• Density 45%
• Devices 18%
• Dielectric Material 9%
• Dielectric-Semiconductor Interface 9%
• Electrical Property 18%
• Field Effect Transistors 9%
• Film 9%
• Grain Boundaries 100%
• Organic Field Effect Transistors 27%
• Polystyrene 9%
• Semiconductor Material 18%
• Surface Treatment 9%
• Thin Films 27%
• Thin-Film Transistor 100%
• Vapor 9%

Chemical Engineering

• Film 100%
• Polystyrene 25%
• Semiconducting Organic Compound 25%