Grain engineering for efficient near-infrared perovskite light-emitting diodes

Sung Doo Baek; Wenhao Shao; Weijie Feng; Yuanhao Tang; Yoon Ho Lee; James Loy; William B. Gunnarsson; Hanjun Yang; Yuchen Zhang; M. Bilal Faheem; Poojan Indrajeet Kaswekar; Harindi R. Atapattu; Jiajun Qin; Aidan H. Coffey; Jee Yung Park; Seok Joo Yang; Yu Ting Yang; Chenhui Zhu; Kang Wang; Kenneth R. Graham; Feng Gao; Quinn Qiao; L. Jay Guo; Barry P. Rand; Letian Dou

doi:10.1038/s41467-024-55075-3

Grain engineering for efficient near-infrared perovskite light-emitting diodes

Sung Doo Baek, Wenhao Shao, Weijie Feng, Yuanhao Tang, Yoon Ho Lee, James Loy, William B. Gunnarsson, Hanjun Yang, Yuchen Zhang, M. Bilal Faheem, Poojan Indrajeet Kaswekar, Harindi R. Atapattu, Jiajun Qin, Aidan H. Coffey, Jee Yung Park, Seok Joo Yang, Yu Ting Yang, Chenhui Zhu, Kang Wang, Kenneth R. GrahamFeng Gao, Quinn Qiao, L. Jay Guo, Barry P. Rand, Letian Dou

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Metal halide perovskites show promise for next-generation light-emitting diodes, particularly in the near-infrared range, where they outperform organic and quantum-dot counterparts. However, they still fall short of costly III-V semiconductor devices, which achieve external quantum efficiencies above 30% with high brightness. Among several factors, controlling grain growth and nanoscale morphology is crucial for further enhancing device performance. This study presents a grain engineering methodology that combines solvent engineering and heterostructure construction to improve light outcoupling efficiency and defect passivation. Solvent engineering enables precise control over grain size and distribution, increasing light outcoupling to ~40%. Constructing 2D/3D heterostructures with a conjugated cation reduces defect densities and accelerates radiative recombination. The resulting near-infrared perovskite light-emitting diodes achieve a peak external quantum efficiency of 31.4% and demonstrate a maximum brightness of 929 W sr⁻¹ m⁻². These findings indicate that perovskite light-emitting diodes have potential as cost-effective, high-performance near-infrared light sources for practical applications.

Original language	English
Article number	10760
Journal	Nature Communications
Volume	15
Issue number	1
DOIs	https://doi.org/10.1038/s41467-024-55075-3
State	Published - Dec 2024

Bibliographical note

Publisher Copyright:
© The Author(s) 2024.

Funding

This work is primarily supported by the U.S. National Science Foundation (Grants No. 2131608-ECCS and 2143568-DMR), U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences (Grant No. DE-SC0022082), U.S. Department of Energy’s Office of Energy Efficiency and Renewable Energy (EERE) under the Solar Energy Technologies Office (Grant No. DE-EE0009519). S.-D.B. acknowledges support from the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (Grants No. 2021R1I1A1A01048035). K.R.G. acknowledges support from the U.S. National Science Foundation (Grant No. 2102257-DMR). The authors acknowledge Sarah N. Chowdhury and Alexandra Boltasseva (Purdue University) for refractive index data of each layer in the device by ellipsometry. The authors acknowledge Wenjing Li for the automated analysis of PLQY data. The authors acknowledge Qixuan Hu for GC-MS data. The views expressed herein do not necessarily represent the views of the U.S. Department of Energy or the United States Government.

Funders	Funder number
Sarah N. Chowdhury and Alexandra Boltasseva
Purdue Climate Change Research Center, Purdue University
National Research Foundation of Korea
Office of Energy Efficiency and Renewable Energy
U.S. Department of Energy EPSCoR
Office of Science Programs
National Science Foundation Arctic Social Science Program	2143568-DMR, 2131608-ECCS
DOE Basic Energy Sciences	DE-SC0022082
Ministry of Education China	2102257-DMR, 2021R1I1A1A01048035
Solar Energy Technologies Office	DE-EE0009519

ASJC Scopus subject areas

General Chemistry
General Biochemistry, Genetics and Molecular Biology
General Physics and Astronomy

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Baek, S. D., Shao, W., Feng, W., Tang, Y., Lee, Y. H., Loy, J., Gunnarsson, W. B., Yang, H., Zhang, Y., Faheem, M. B., Kaswekar, P. I., Atapattu, H. R., Qin, J., Coffey, A. H., Park, J. Y., Yang, S. J., Yang, Y. T., Zhu, C., Wang, K., ... Dou, L. (2024). Grain engineering for efficient near-infrared perovskite light-emitting diodes. Nature Communications, 15(1), Article 10760. https://doi.org/10.1038/s41467-024-55075-3

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title = "Grain engineering for efficient near-infrared perovskite light-emitting diodes",

abstract = "Metal halide perovskites show promise for next-generation light-emitting diodes, particularly in the near-infrared range, where they outperform organic and quantum-dot counterparts. However, they still fall short of costly III-V semiconductor devices, which achieve external quantum efficiencies above 30\% with high brightness. Among several factors, controlling grain growth and nanoscale morphology is crucial for further enhancing device performance. This study presents a grain engineering methodology that combines solvent engineering and heterostructure construction to improve light outcoupling efficiency and defect passivation. Solvent engineering enables precise control over grain size and distribution, increasing light outcoupling to \textasciitilde{}40\%. Constructing 2D/3D heterostructures with a conjugated cation reduces defect densities and accelerates radiative recombination. The resulting near-infrared perovskite light-emitting diodes achieve a peak external quantum efficiency of 31.4\% and demonstrate a maximum brightness of 929 W sr−1 m−2. These findings indicate that perovskite light-emitting diodes have potential as cost-effective, high-performance near-infrared light sources for practical applications.",

author = "Baek, \{Sung Doo\} and Wenhao Shao and Weijie Feng and Yuanhao Tang and Lee, \{Yoon Ho\} and James Loy and Gunnarsson, \{William B.\} and Hanjun Yang and Yuchen Zhang and Faheem, \{M. Bilal\} and Kaswekar, \{Poojan Indrajeet\} and Atapattu, \{Harindi R.\} and Jiajun Qin and Coffey, \{Aidan H.\} and Park, \{Jee Yung\} and Yang, \{Seok Joo\} and Yang, \{Yu Ting\} and Chenhui Zhu and Kang Wang and Graham, \{Kenneth R.\} and Feng Gao and Quinn Qiao and Guo, \{L. Jay\} and Rand, \{Barry P.\} and Letian Dou",

note = "Publisher Copyright: {\textcopyright} The Author(s) 2024.",

year = "2024",

month = dec,

doi = "10.1038/s41467-024-55075-3",

language = "English",

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Baek, SD, Shao, W, Feng, W, Tang, Y, Lee, YH, Loy, J, Gunnarsson, WB, Yang, H, Zhang, Y, Faheem, MB, Kaswekar, PI, Atapattu, HR, Qin, J, Coffey, AH, Park, JY, Yang, SJ, Yang, YT, Zhu, C, Wang, K, Graham, KR, Gao, F, Qiao, Q, Guo, LJ, Rand, BP & Dou, L 2024, 'Grain engineering for efficient near-infrared perovskite light-emitting diodes', Nature Communications, vol. 15, no. 1, 10760. https://doi.org/10.1038/s41467-024-55075-3

TY - JOUR

T1 - Grain engineering for efficient near-infrared perovskite light-emitting diodes

AU - Baek, Sung Doo

AU - Shao, Wenhao

AU - Feng, Weijie

AU - Tang, Yuanhao

AU - Lee, Yoon Ho

AU - Loy, James

AU - Gunnarsson, William B.

AU - Yang, Hanjun

AU - Zhang, Yuchen

AU - Faheem, M. Bilal

AU - Kaswekar, Poojan Indrajeet

AU - Atapattu, Harindi R.

AU - Qin, Jiajun

AU - Coffey, Aidan H.

AU - Park, Jee Yung

AU - Yang, Seok Joo

AU - Yang, Yu Ting

AU - Zhu, Chenhui

AU - Wang, Kang

AU - Graham, Kenneth R.

AU - Gao, Feng

AU - Qiao, Quinn

AU - Guo, L. Jay

AU - Rand, Barry P.

AU - Dou, Letian

PY - 2024/12

Y1 - 2024/12

N2 - Metal halide perovskites show promise for next-generation light-emitting diodes, particularly in the near-infrared range, where they outperform organic and quantum-dot counterparts. However, they still fall short of costly III-V semiconductor devices, which achieve external quantum efficiencies above 30% with high brightness. Among several factors, controlling grain growth and nanoscale morphology is crucial for further enhancing device performance. This study presents a grain engineering methodology that combines solvent engineering and heterostructure construction to improve light outcoupling efficiency and defect passivation. Solvent engineering enables precise control over grain size and distribution, increasing light outcoupling to ~40%. Constructing 2D/3D heterostructures with a conjugated cation reduces defect densities and accelerates radiative recombination. The resulting near-infrared perovskite light-emitting diodes achieve a peak external quantum efficiency of 31.4% and demonstrate a maximum brightness of 929 W sr−1 m−2. These findings indicate that perovskite light-emitting diodes have potential as cost-effective, high-performance near-infrared light sources for practical applications.

AB - Metal halide perovskites show promise for next-generation light-emitting diodes, particularly in the near-infrared range, where they outperform organic and quantum-dot counterparts. However, they still fall short of costly III-V semiconductor devices, which achieve external quantum efficiencies above 30% with high brightness. Among several factors, controlling grain growth and nanoscale morphology is crucial for further enhancing device performance. This study presents a grain engineering methodology that combines solvent engineering and heterostructure construction to improve light outcoupling efficiency and defect passivation. Solvent engineering enables precise control over grain size and distribution, increasing light outcoupling to ~40%. Constructing 2D/3D heterostructures with a conjugated cation reduces defect densities and accelerates radiative recombination. The resulting near-infrared perovskite light-emitting diodes achieve a peak external quantum efficiency of 31.4% and demonstrate a maximum brightness of 929 W sr−1 m−2. These findings indicate that perovskite light-emitting diodes have potential as cost-effective, high-performance near-infrared light sources for practical applications.

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Grain engineering for efficient near-infrared perovskite light-emitting diodes

Abstract

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