High-mobility ambipolar transistors and high-cain inverters from a donor-acceptor copolymer semiconductor

Felix Sunjoo Kim; Xugang Guo; Mark D. Watson; Samson A. Jenekhe

doi:10.1002/adma.200901819

High-mobility ambipolar transistors and high-cain inverters from a donor-acceptor copolymer semiconductor

Felix Sunjoo Kim, Xugang Guo, Mark D. Watson, Samson A. Jenekhe

Chemistry

Research output: Contribution to journal › Article › peer-review

289 Scopus citations

Abstract

Figure Presented High-performance ambipolar transistors and inverters are demonstrated using a new donor-acceptor copolymer semiconductor. The ambipolar transistors show electron and hole mobilities of up to 0.04 and 0.003 cm ² V^-1 s^-1, respectively. Voltage transfer curves of the inverters made on common gold electrodes showed sharp switching with a gain of 30.

Original language	English
Pages (from-to)	478-482
Number of pages	5
Journal	Advanced Materials
Volume	22
Issue number	4
DOIs	https://doi.org/10.1002/adma.200901819
State	Published - Jan 26 2010

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.200901819

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title = "High-mobility ambipolar transistors and high-cain inverters from a donor-acceptor copolymer semiconductor",

abstract = "Figure Presented High-performance ambipolar transistors and inverters are demonstrated using a new donor-acceptor copolymer semiconductor. The ambipolar transistors show electron and hole mobilities of up to 0.04 and 0.003 cm 2 V-1 s-1, respectively. Voltage transfer curves of the inverters made on common gold electrodes showed sharp switching with a gain of 30.",

author = "Kim, {Felix Sunjoo} and Xugang Guo and Watson, {Mark D.} and Jenekhe, {Samson A.}",

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AU - Kim, Felix Sunjoo

AU - Guo, Xugang

AU - Watson, Mark D.

AU - Jenekhe, Samson A.

PY - 2010/1/26

Y1 - 2010/1/26

N2 - Figure Presented High-performance ambipolar transistors and inverters are demonstrated using a new donor-acceptor copolymer semiconductor. The ambipolar transistors show electron and hole mobilities of up to 0.04 and 0.003 cm 2 V-1 s-1, respectively. Voltage transfer curves of the inverters made on common gold electrodes showed sharp switching with a gain of 30.

AB - Figure Presented High-performance ambipolar transistors and inverters are demonstrated using a new donor-acceptor copolymer semiconductor. The ambipolar transistors show electron and hole mobilities of up to 0.04 and 0.003 cm 2 V-1 s-1, respectively. Voltage transfer curves of the inverters made on common gold electrodes showed sharp switching with a gain of 30.

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JO - Advanced Materials

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High-mobility ambipolar transistors and high-cain inverters from a donor-acceptor copolymer semiconductor

Abstract

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