Abstract
We report high-mobility organic thin film transistors (OTFTs) with good uniformity using the small molecule organic semiconductor 2,8-difluoro-5,11- bis(triethylsilylethynyl) anthradithiophene (diF-TESADT). diF-TESADT was spin cast to form OTFTs with a carrier mobility of more than 1.5 cm2 V s and shows a useful differential microstructure on or near pentaflorobenzenethiol (PFBT) treated Au source/drain electrodes compared to untreated Au or gate dielectric areas with improved molecular order observed on PFBT treated Au electrodes. For short channel length devices diF-TESADT crystal grains extend between the source and drain electrodes, resulting in increasing OTFT field effect mobility for decreasing gate length.
Original language | English |
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Article number | 043301 |
Journal | Applied Physics Letters |
Volume | 93 |
Issue number | 4 |
DOIs | |
State | Published - 2008 |
Bibliographical note
Funding Information:This work was partially supported by the National Science Foundation through the Penn State Center for Nanoscale Science and by the Office of Naval Research.
Funding
This work was partially supported by the National Science Foundation through the Penn State Center for Nanoscale Science and by the Office of Naval Research.
Funders | Funder number |
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Penn State Center for Nanoscale Science | |
National Science Foundation (NSF) | |
Office of Naval Research |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)