High-mobility spin-cast organic thin film transistors

Sung Kyu Park; Devin A. Mourey; Sankar Subramanian; John E. Anthony; Thomas N. Jackson

doi:10.1063/1.2952769

High-mobility spin-cast organic thin film transistors

Sung Kyu Park, Devin A. Mourey, Sankar Subramanian, John E. Anthony, Thomas N. Jackson

Research output: Contribution to journal › Article › peer-review

102 Scopus citations

Abstract

We report high-mobility organic thin film transistors (OTFTs) with good uniformity using the small molecule organic semiconductor 2,8-difluoro-5,11- bis(triethylsilylethynyl) anthradithiophene (diF-TESADT). diF-TESADT was spin cast to form OTFTs with a carrier mobility of more than 1.5 cm2 V s and shows a useful differential microstructure on or near pentaflorobenzenethiol (PFBT) treated Au source/drain electrodes compared to untreated Au or gate dielectric areas with improved molecular order observed on PFBT treated Au electrodes. For short channel length devices diF-TESADT crystal grains extend between the source and drain electrodes, resulting in increasing OTFT field effect mobility for decreasing gate length.

Original language	English
Article number	043301
Journal	Applied Physics Letters
Volume	93
Issue number	4
DOIs	https://doi.org/10.1063/1.2952769
State	Published - 2008

Bibliographical note

Funding Information:
This work was partially supported by the National Science Foundation through the Penn State Center for Nanoscale Science and by the Office of Naval Research.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{dd25eed9eaa447629b565f515ccd2f2b,

title = "High-mobility spin-cast organic thin film transistors",

abstract = "We report high-mobility organic thin film transistors (OTFTs) with good uniformity using the small molecule organic semiconductor 2,8-difluoro-5,11- bis(triethylsilylethynyl) anthradithiophene (diF-TESADT). diF-TESADT was spin cast to form OTFTs with a carrier mobility of more than 1.5 cm2 V s and shows a useful differential microstructure on or near pentaflorobenzenethiol (PFBT) treated Au source/drain electrodes compared to untreated Au or gate dielectric areas with improved molecular order observed on PFBT treated Au electrodes. For short channel length devices diF-TESADT crystal grains extend between the source and drain electrodes, resulting in increasing OTFT field effect mobility for decreasing gate length.",

author = "Park, {Sung Kyu} and Mourey, {Devin A.} and Sankar Subramanian and Anthony, {John E.} and Jackson, {Thomas N.}",

note = "Funding Information: This work was partially supported by the National Science Foundation through the Penn State Center for Nanoscale Science and by the Office of Naval Research.",

year = "2008",

doi = "10.1063/1.2952769",

language = "English",

volume = "93",

number = "4",

}

TY - JOUR

T1 - High-mobility spin-cast organic thin film transistors

AU - Park, Sung Kyu

AU - Mourey, Devin A.

AU - Subramanian, Sankar

AU - Anthony, John E.

AU - Jackson, Thomas N.

N1 - Funding Information: This work was partially supported by the National Science Foundation through the Penn State Center for Nanoscale Science and by the Office of Naval Research.

PY - 2008

Y1 - 2008

N2 - We report high-mobility organic thin film transistors (OTFTs) with good uniformity using the small molecule organic semiconductor 2,8-difluoro-5,11- bis(triethylsilylethynyl) anthradithiophene (diF-TESADT). diF-TESADT was spin cast to form OTFTs with a carrier mobility of more than 1.5 cm2 V s and shows a useful differential microstructure on or near pentaflorobenzenethiol (PFBT) treated Au source/drain electrodes compared to untreated Au or gate dielectric areas with improved molecular order observed on PFBT treated Au electrodes. For short channel length devices diF-TESADT crystal grains extend between the source and drain electrodes, resulting in increasing OTFT field effect mobility for decreasing gate length.

AB - We report high-mobility organic thin film transistors (OTFTs) with good uniformity using the small molecule organic semiconductor 2,8-difluoro-5,11- bis(triethylsilylethynyl) anthradithiophene (diF-TESADT). diF-TESADT was spin cast to form OTFTs with a carrier mobility of more than 1.5 cm2 V s and shows a useful differential microstructure on or near pentaflorobenzenethiol (PFBT) treated Au source/drain electrodes compared to untreated Au or gate dielectric areas with improved molecular order observed on PFBT treated Au electrodes. For short channel length devices diF-TESADT crystal grains extend between the source and drain electrodes, resulting in increasing OTFT field effect mobility for decreasing gate length.

UR - http://www.scopus.com/inward/record.url?scp=49149097168&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=49149097168&partnerID=8YFLogxK

U2 - 10.1063/1.2952769

DO - 10.1063/1.2952769

M3 - Article

AN - SCOPUS:49149097168

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 043301

ER -

High-mobility spin-cast organic thin film transistors

Abstract

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