High-mobility spin-cast organic thin film transistors

Sung Kyu Park, Devin A. Mourey, Sankar Subramanian, John E. Anthony, Thomas N. Jackson

Research output: Contribution to journalArticlepeer-review

101 Scopus citations


We report high-mobility organic thin film transistors (OTFTs) with good uniformity using the small molecule organic semiconductor 2,8-difluoro-5,11- bis(triethylsilylethynyl) anthradithiophene (diF-TESADT). diF-TESADT was spin cast to form OTFTs with a carrier mobility of more than 1.5 cm2 V s and shows a useful differential microstructure on or near pentaflorobenzenethiol (PFBT) treated Au source/drain electrodes compared to untreated Au or gate dielectric areas with improved molecular order observed on PFBT treated Au electrodes. For short channel length devices diF-TESADT crystal grains extend between the source and drain electrodes, resulting in increasing OTFT field effect mobility for decreasing gate length.

Original languageEnglish
Article number043301
JournalApplied Physics Letters
Issue number4
StatePublished - 2008

Bibliographical note

Funding Information:
This work was partially supported by the National Science Foundation through the Penn State Center for Nanoscale Science and by the Office of Naval Research.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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