We report high-mobility organic thin film transistors (OTFTs) with good uniformity using the small molecule organic semiconductor 2,8-difluoro-5,11- bis(triethylsilylethynyl) anthradithiophene (diF-TESADT). diF-TESADT was spin cast to form OTFTs with a carrier mobility of more than 1.5 cm2 V s and shows a useful differential microstructure on or near pentaflorobenzenethiol (PFBT) treated Au source/drain electrodes compared to untreated Au or gate dielectric areas with improved molecular order observed on PFBT treated Au electrodes. For short channel length devices diF-TESADT crystal grains extend between the source and drain electrodes, resulting in increasing OTFT field effect mobility for decreasing gate length.
|Journal||Applied Physics Letters|
|State||Published - 2008|
Bibliographical noteFunding Information:
This work was partially supported by the National Science Foundation through the Penn State Center for Nanoscale Science and by the Office of Naval Research.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)