High near infrared absorption of hyper-doped silicon induced by co-doping of sulfur and nitrogen

Yaoyu Xuan, Ting Zhang, Bohan Liu, Ruihan Yang, Waseem Ahmad, Zhijun Liu, Zhi Chen, Shibin Li

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


In this paper, we investigate the dependence of NIR absorption of hyper-doped silicon on different sulfur and nitrogen doping ratio. With different molecular proportion of N2 and SF6 background gas, femtosecond laser irradiation was used to implant co-doping of sulfur and nitrogen into silicon. The hyper-doped silicon presents high absorption properties in NIR and visible range. The results of first-principles calculations demonstrate the high absorption in NIR is ascribed to the induced impurity energy levels in hyper-doped silicon. The nitrogen doping process improves the crystallinity in the doped layer because the doped nitrogen repairs defects in silicon lattices. Given the thermal stability of nitrogen, the co-doping dopants limit the diffusion of sulfur during the annealing process. The co-doping process proposed in this paper provides a method to fabricate high performance NIR silicon optoelectronic device.

Original languageEnglish
Pages (from-to)2855-2860
Number of pages6
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number11
StatePublished - Nov 1 2016

Bibliographical note

Publisher Copyright:
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim


  • absorption
  • co-doping
  • first-principles calculations
  • surface morphology

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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