High near infrared absorption of hyper-doped silicon induced by co-doping of sulfur and nitrogen

Yaoyu Xuan, Ting Zhang, Bohan Liu, Ruihan Yang, Waseem Ahmad, Zhijun Liu, Zhi Chen, Shibin Li

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


In this paper, we investigate the dependence of NIR absorption of hyper-doped silicon on different sulfur and nitrogen doping ratio. With different molecular proportion of N2 and SF6 background gas, femtosecond laser irradiation was used to implant co-doping of sulfur and nitrogen into silicon. The hyper-doped silicon presents high absorption properties in NIR and visible range. The results of first-principles calculations demonstrate the high absorption in NIR is ascribed to the induced impurity energy levels in hyper-doped silicon. The nitrogen doping process improves the crystallinity in the doped layer because the doped nitrogen repairs defects in silicon lattices. Given the thermal stability of nitrogen, the co-doping dopants limit the diffusion of sulfur during the annealing process. The co-doping process proposed in this paper provides a method to fabricate high performance NIR silicon optoelectronic device.

Original languageEnglish
Pages (from-to)2855-2860
Number of pages6
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number11
StatePublished - Nov 1 2016

Bibliographical note

Funding Information:
This work was supported by National Natural Science Foundation of China under grant nos. 61474016 and 61405026, 61371046, 61421002. This work was also partially supported by University of Kentucky.

Publisher Copyright:
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim


  • absorption
  • co-doping
  • first-principles calculations
  • surface morphology

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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