High near infrared absorption of hyper-doped silicon induced by co-doping of sulfur and nitrogen

Yaoyu Xuan; Ting Zhang; Bohan Liu; Ruihan Yang; Waseem Ahmad; Zhijun Liu; Zhi Chen; Shibin Li

doi:10.1002/pssa.201600524

High near infrared absorption of hyper-doped silicon induced by co-doping of sulfur and nitrogen

Yaoyu Xuan, Ting Zhang, Bohan Liu, Ruihan Yang, Waseem Ahmad, Zhijun Liu, Zhi Chen, Shibin Li

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this paper, we investigate the dependence of NIR absorption of hyper-doped silicon on different sulfur and nitrogen doping ratio. With different molecular proportion of N₂ and SF₆ background gas, femtosecond laser irradiation was used to implant co-doping of sulfur and nitrogen into silicon. The hyper-doped silicon presents high absorption properties in NIR and visible range. The results of first-principles calculations demonstrate the high absorption in NIR is ascribed to the induced impurity energy levels in hyper-doped silicon. The nitrogen doping process improves the crystallinity in the doped layer because the doped nitrogen repairs defects in silicon lattices. Given the thermal stability of nitrogen, the co-doping dopants limit the diffusion of sulfur during the annealing process. The co-doping process proposed in this paper provides a method to fabricate high performance NIR silicon optoelectronic device.

Original language	English
Pages (from-to)	2855-2860
Number of pages	6
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	213
Issue number	11
DOIs	https://doi.org/10.1002/pssa.201600524
State	Published - Nov 1 2016

Bibliographical note

Funding Information:
This work was supported by National Natural Science Foundation of China under grant nos. 61474016 and 61405026, 61371046, 61421002. This work was also partially supported by University of Kentucky.

Publisher Copyright:
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Keywords

absorption
co-doping
first-principles calculations
surface morphology

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1002/pssa.201600524

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@article{44eb77c3a1624b1abf8b33d4bc5a0bef,

title = "High near infrared absorption of hyper-doped silicon induced by co-doping of sulfur and nitrogen",

abstract = "In this paper, we investigate the dependence of NIR absorption of hyper-doped silicon on different sulfur and nitrogen doping ratio. With different molecular proportion of N2 and SF6 background gas, femtosecond laser irradiation was used to implant co-doping of sulfur and nitrogen into silicon. The hyper-doped silicon presents high absorption properties in NIR and visible range. The results of first-principles calculations demonstrate the high absorption in NIR is ascribed to the induced impurity energy levels in hyper-doped silicon. The nitrogen doping process improves the crystallinity in the doped layer because the doped nitrogen repairs defects in silicon lattices. Given the thermal stability of nitrogen, the co-doping dopants limit the diffusion of sulfur during the annealing process. The co-doping process proposed in this paper provides a method to fabricate high performance NIR silicon optoelectronic device.",

keywords = "absorption, co-doping, first-principles calculations, surface morphology",

author = "Yaoyu Xuan and Ting Zhang and Bohan Liu and Ruihan Yang and Waseem Ahmad and Zhijun Liu and Zhi Chen and Shibin Li",

note = "Funding Information: This work was supported by National Natural Science Foundation of China under grant nos. 61474016 and 61405026, 61371046, 61421002. This work was also partially supported by University of Kentucky. Publisher Copyright: {\textcopyright} 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2016",

month = nov,

day = "1",

doi = "10.1002/pssa.201600524",

language = "English",

volume = "213",

pages = "2855--2860",

number = "11",

}

TY - JOUR

T1 - High near infrared absorption of hyper-doped silicon induced by co-doping of sulfur and nitrogen

AU - Xuan, Yaoyu

AU - Zhang, Ting

AU - Liu, Bohan

AU - Yang, Ruihan

AU - Ahmad, Waseem

AU - Liu, Zhijun

AU - Chen, Zhi

AU - Li, Shibin

N1 - Funding Information: This work was supported by National Natural Science Foundation of China under grant nos. 61474016 and 61405026, 61371046, 61421002. This work was also partially supported by University of Kentucky. Publisher Copyright: © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

PY - 2016/11/1

Y1 - 2016/11/1

N2 - In this paper, we investigate the dependence of NIR absorption of hyper-doped silicon on different sulfur and nitrogen doping ratio. With different molecular proportion of N2 and SF6 background gas, femtosecond laser irradiation was used to implant co-doping of sulfur and nitrogen into silicon. The hyper-doped silicon presents high absorption properties in NIR and visible range. The results of first-principles calculations demonstrate the high absorption in NIR is ascribed to the induced impurity energy levels in hyper-doped silicon. The nitrogen doping process improves the crystallinity in the doped layer because the doped nitrogen repairs defects in silicon lattices. Given the thermal stability of nitrogen, the co-doping dopants limit the diffusion of sulfur during the annealing process. The co-doping process proposed in this paper provides a method to fabricate high performance NIR silicon optoelectronic device.

AB - In this paper, we investigate the dependence of NIR absorption of hyper-doped silicon on different sulfur and nitrogen doping ratio. With different molecular proportion of N2 and SF6 background gas, femtosecond laser irradiation was used to implant co-doping of sulfur and nitrogen into silicon. The hyper-doped silicon presents high absorption properties in NIR and visible range. The results of first-principles calculations demonstrate the high absorption in NIR is ascribed to the induced impurity energy levels in hyper-doped silicon. The nitrogen doping process improves the crystallinity in the doped layer because the doped nitrogen repairs defects in silicon lattices. Given the thermal stability of nitrogen, the co-doping dopants limit the diffusion of sulfur during the annealing process. The co-doping process proposed in this paper provides a method to fabricate high performance NIR silicon optoelectronic device.

KW - absorption

KW - co-doping

KW - first-principles calculations

KW - surface morphology

UR - http://www.scopus.com/inward/record.url?scp=84995611771&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84995611771&partnerID=8YFLogxK

U2 - 10.1002/pssa.201600524

DO - 10.1002/pssa.201600524

M3 - Article

AN - SCOPUS:84995611771

VL - 213

SP - 2855

EP - 2860

IS - 11

ER -

High near infrared absorption of hyper-doped silicon induced by co-doping of sulfur and nitrogen

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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