In this paper, we investigate the dependence of NIR absorption of hyper-doped silicon on different sulfur and nitrogen doping ratio. With different molecular proportion of N2 and SF6 background gas, femtosecond laser irradiation was used to implant co-doping of sulfur and nitrogen into silicon. The hyper-doped silicon presents high absorption properties in NIR and visible range. The results of first-principles calculations demonstrate the high absorption in NIR is ascribed to the induced impurity energy levels in hyper-doped silicon. The nitrogen doping process improves the crystallinity in the doped layer because the doped nitrogen repairs defects in silicon lattices. Given the thermal stability of nitrogen, the co-doping dopants limit the diffusion of sulfur during the annealing process. The co-doping process proposed in this paper provides a method to fabricate high performance NIR silicon optoelectronic device.
|Number of pages||6|
|Journal||Physica Status Solidi (A) Applications and Materials Science|
|State||Published - Nov 1 2016|
Bibliographical noteFunding Information:
This work was supported by National Natural Science Foundation of China under grant nos. 61474016 and 61405026, 61371046, 61421002. This work was also partially supported by University of Kentucky.
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- first-principles calculations
- surface morphology
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry