Abstract
In this paper, we investigate the dependence of NIR absorption of hyper-doped silicon on different sulfur and nitrogen doping ratio. With different molecular proportion of N2 and SF6 background gas, femtosecond laser irradiation was used to implant co-doping of sulfur and nitrogen into silicon. The hyper-doped silicon presents high absorption properties in NIR and visible range. The results of first-principles calculations demonstrate the high absorption in NIR is ascribed to the induced impurity energy levels in hyper-doped silicon. The nitrogen doping process improves the crystallinity in the doped layer because the doped nitrogen repairs defects in silicon lattices. Given the thermal stability of nitrogen, the co-doping dopants limit the diffusion of sulfur during the annealing process. The co-doping process proposed in this paper provides a method to fabricate high performance NIR silicon optoelectronic device.
Original language | English |
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Pages (from-to) | 2855-2860 |
Number of pages | 6 |
Journal | Physica Status Solidi (A) Applications and Materials Science |
Volume | 213 |
Issue number | 11 |
DOIs | |
State | Published - Nov 1 2016 |
Bibliographical note
Publisher Copyright:© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Keywords
- absorption
- co-doping
- first-principles calculations
- surface morphology
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry