High-throughput nanogap formation using single ramp feedback control

Stephen L. Johnson, D. Patrick Hunley, Abhishek Sundararajan, A. T.Charlie Johnson, Douglas R. Strachan

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


We demonstrate a technique for simultaneously fabricating arrays of electromigrated nanogaps using a single-ramp feedback-controlled voltage clamp. The parallel formation is achieved by controlling the applied bias with a voltage clamp directly adjacent to a nanogap array containing low-impedance shunts. Self-balancing of the electromigration permits the two voltage leads to fix the applied voltage across all the forming nanogaps simultaneously. This single-ramp feedback-controlled voltage clamp method is at least a 100 times faster than previous work utilizing computer feedback control of parallel nanojunctions and also circumvents the deleterious thermal runaway that occurs in the conventional single-ramp technique.

Original languageEnglish
Article number5582297
Pages (from-to)806-809
Number of pages4
JournalIEEE Transactions on Nanotechnology
Issue number4
StatePublished - Jul 2011

Bibliographical note

Funding Information:
Manuscript received May 10, 2010; revised July 27, 2010; accepted September 15, 2010. Date of publication September 23, 2010; date of current version July 8, 2011. This work was supported by the National Science Foundation (NSF) under Grant DMR-0805136, by the Kentucky NSF Experimental Program to Stimulate Competitive Research (EPSCoR) program under Award EPS-0814194, and by the Center for Advanced Materials (CAM), University of Kentucky (UK). The review of this paper was arranged by Associate Editor G. Ramanath.


  • Electromigration
  • molecular electronics
  • nanoelectronics
  • nanogap electrodes
  • parallel nanogaps

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering


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