High-throughput nanogap formation using single ramp feedback control

Stephen L. Johnson; D. Patrick Hunley; Abhishek Sundararajan; A. T.Charlie Johnson; Douglas R. Strachan

doi:10.1109/TNANO.2010.2080283

High-throughput nanogap formation using single ramp feedback control

Stephen L. Johnson
, D. Patrick Hunley
, Abhishek Sundararajan
, A. T.Charlie Johnson
, Douglas R. Strachan

Physics And Astronomy

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We demonstrate a technique for simultaneously fabricating arrays of electromigrated nanogaps using a single-ramp feedback-controlled voltage clamp. The parallel formation is achieved by controlling the applied bias with a voltage clamp directly adjacent to a nanogap array containing low-impedance shunts. Self-balancing of the electromigration permits the two voltage leads to fix the applied voltage across all the forming nanogaps simultaneously. This single-ramp feedback-controlled voltage clamp method is at least a 100 times faster than previous work utilizing computer feedback control of parallel nanojunctions and also circumvents the deleterious thermal runaway that occurs in the conventional single-ramp technique.

Original language	English
Article number	5582297
Pages (from-to)	806-809
Number of pages	4
Journal	IEEE Transactions on Nanotechnology
Volume	10
Issue number	4
DOIs	https://doi.org/10.1109/TNANO.2010.2080283
State	Published - Jul 2011

Bibliographical note

Funding Information:
Manuscript received May 10, 2010; revised July 27, 2010; accepted September 15, 2010. Date of publication September 23, 2010; date of current version July 8, 2011. This work was supported by the National Science Foundation (NSF) under Grant DMR-0805136, by the Kentucky NSF Experimental Program to Stimulate Competitive Research (EPSCoR) program under Award EPS-0814194, and by the Center for Advanced Materials (CAM), University of Kentucky (UK). The review of this paper was arranged by Associate Editor G. Ramanath.

Funding

Manuscript received May 10, 2010; revised July 27, 2010; accepted September 15, 2010. Date of publication September 23, 2010; date of current version July 8, 2011. This work was supported by the National Science Foundation (NSF) under Grant DMR-0805136, by the Kentucky NSF Experimental Program to Stimulate Competitive Research (EPSCoR) program under Award EPS-0814194, and by the Center for Advanced Materials (CAM), University of Kentucky (UK). The review of this paper was arranged by Associate Editor G. Ramanath.

Funders	Funder number
Center for Advanced Molecular Materials
NSF-Kentucky EPSCoR	EPS-0814194
National Science Foundation (NSF)	DMR-0805136
University of Kentucky

Keywords

Electromigration
molecular electronics
nanoelectronics
nanogap electrodes
parallel nanogaps

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

Access to Document

10.1109/TNANO.2010.2080283

Cite this

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title = "High-throughput nanogap formation using single ramp feedback control",

abstract = "We demonstrate a technique for simultaneously fabricating arrays of electromigrated nanogaps using a single-ramp feedback-controlled voltage clamp. The parallel formation is achieved by controlling the applied bias with a voltage clamp directly adjacent to a nanogap array containing low-impedance shunts. Self-balancing of the electromigration permits the two voltage leads to fix the applied voltage across all the forming nanogaps simultaneously. This single-ramp feedback-controlled voltage clamp method is at least a 100 times faster than previous work utilizing computer feedback control of parallel nanojunctions and also circumvents the deleterious thermal runaway that occurs in the conventional single-ramp technique.",

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author = "Johnson, \{Stephen L.\} and Hunley, \{D. Patrick\} and Abhishek Sundararajan and Johnson, \{A. T.Charlie\} and Strachan, \{Douglas R.\}",

note = "Funding Information: Manuscript received May 10, 2010; revised July 27, 2010; accepted September 15, 2010. Date of publication September 23, 2010; date of current version July 8, 2011. This work was supported by the National Science Foundation (NSF) under Grant DMR-0805136, by the Kentucky NSF Experimental Program to Stimulate Competitive Research (EPSCoR) program under Award EPS-0814194, and by the Center for Advanced Materials (CAM), University of Kentucky (UK). The review of this paper was arranged by Associate Editor G. Ramanath.",

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AU - Hunley, D. Patrick

AU - Sundararajan, Abhishek

AU - Johnson, A. T.Charlie

AU - Strachan, Douglas R.

N1 - Funding Information: Manuscript received May 10, 2010; revised July 27, 2010; accepted September 15, 2010. Date of publication September 23, 2010; date of current version July 8, 2011. This work was supported by the National Science Foundation (NSF) under Grant DMR-0805136, by the Kentucky NSF Experimental Program to Stimulate Competitive Research (EPSCoR) program under Award EPS-0814194, and by the Center for Advanced Materials (CAM), University of Kentucky (UK). The review of this paper was arranged by Associate Editor G. Ramanath.

PY - 2011/7

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N2 - We demonstrate a technique for simultaneously fabricating arrays of electromigrated nanogaps using a single-ramp feedback-controlled voltage clamp. The parallel formation is achieved by controlling the applied bias with a voltage clamp directly adjacent to a nanogap array containing low-impedance shunts. Self-balancing of the electromigration permits the two voltage leads to fix the applied voltage across all the forming nanogaps simultaneously. This single-ramp feedback-controlled voltage clamp method is at least a 100 times faster than previous work utilizing computer feedback control of parallel nanojunctions and also circumvents the deleterious thermal runaway that occurs in the conventional single-ramp technique.

AB - We demonstrate a technique for simultaneously fabricating arrays of electromigrated nanogaps using a single-ramp feedback-controlled voltage clamp. The parallel formation is achieved by controlling the applied bias with a voltage clamp directly adjacent to a nanogap array containing low-impedance shunts. Self-balancing of the electromigration permits the two voltage leads to fix the applied voltage across all the forming nanogaps simultaneously. This single-ramp feedback-controlled voltage clamp method is at least a 100 times faster than previous work utilizing computer feedback control of parallel nanojunctions and also circumvents the deleterious thermal runaway that occurs in the conventional single-ramp technique.

KW - Electromigration

KW - molecular electronics

KW - nanoelectronics

KW - nanogap electrodes

KW - parallel nanogaps

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JF - IEEE Transactions on Nanotechnology

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ER -

High-throughput nanogap formation using single ramp feedback control

Abstract

Bibliographical note

Funding

Keywords

ASJC Scopus subject areas

Access to Document

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