Hillock formation and thermal stresses in thin Au films on Si substrates

Linda Sauter; T. John Balk; Gerhard Dehm; Julie A. Nucci; Eduard Arzt

doi:10.1557/proc-875-o5.2

Hillock formation and thermal stresses in thin Au films on Si substrates

Linda Sauter, T. John Balk, Gerhard Dehm, Julie A. Nucci, Eduard Arzt

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

The wafer curvature technique was used to analyze stresses in fine-grained, 50 nm to 2 μm thick Au films on silicon substrates between room temperature and 500°C. The microstructural evolution was analyzed by scanning electron microscopy (SEM), focused ion beam (FIB) microscopy and transmission electron microscopy (TEM). In situ heating experiments inside a scanning electron microscope provided a comparison between the morphological development and the stress-temperature behavior of the film. Hillock formation was observed, but it can only partially account for the stress relaxation measured by the wafer curvature technique.

Original language	English
Article number	O5.2
Pages (from-to)	177-182
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	875
DOIs	https://doi.org/10.1557/proc-875-o5.2
State	Published - 2005
Event	2005 Materials Research Society Spring Meeting - San Francisco, CA, United States Duration: Mar 28 2005 → Apr 1 2005

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Hillock formation and thermal stresses in thin Au films on Si substrates",

abstract = "The wafer curvature technique was used to analyze stresses in fine-grained, 50 nm to 2 μm thick Au films on silicon substrates between room temperature and 500°C. The microstructural evolution was analyzed by scanning electron microscopy (SEM), focused ion beam (FIB) microscopy and transmission electron microscopy (TEM). In situ heating experiments inside a scanning electron microscope provided a comparison between the morphological development and the stress-temperature behavior of the film. Hillock formation was observed, but it can only partially account for the stress relaxation measured by the wafer curvature technique.",

author = "Linda Sauter and Balk, {T. John} and Gerhard Dehm and Nucci, {Julie A.} and Eduard Arzt",

year = "2005",

doi = "10.1557/proc-875-o5.2",

language = "English",

volume = "875",

pages = "177--182",

note = "2005 Materials Research Society Spring Meeting ; Conference date: 28-03-2005 Through 01-04-2005",

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TY - JOUR

T1 - Hillock formation and thermal stresses in thin Au films on Si substrates

AU - Sauter, Linda

AU - Balk, T. John

AU - Dehm, Gerhard

AU - Nucci, Julie A.

AU - Arzt, Eduard

PY - 2005

Y1 - 2005

N2 - The wafer curvature technique was used to analyze stresses in fine-grained, 50 nm to 2 μm thick Au films on silicon substrates between room temperature and 500°C. The microstructural evolution was analyzed by scanning electron microscopy (SEM), focused ion beam (FIB) microscopy and transmission electron microscopy (TEM). In situ heating experiments inside a scanning electron microscope provided a comparison between the morphological development and the stress-temperature behavior of the film. Hillock formation was observed, but it can only partially account for the stress relaxation measured by the wafer curvature technique.

AB - The wafer curvature technique was used to analyze stresses in fine-grained, 50 nm to 2 μm thick Au films on silicon substrates between room temperature and 500°C. The microstructural evolution was analyzed by scanning electron microscopy (SEM), focused ion beam (FIB) microscopy and transmission electron microscopy (TEM). In situ heating experiments inside a scanning electron microscope provided a comparison between the morphological development and the stress-temperature behavior of the film. Hillock formation was observed, but it can only partially account for the stress relaxation measured by the wafer curvature technique.

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U2 - 10.1557/proc-875-o5.2

DO - 10.1557/proc-875-o5.2

M3 - Conference article

AN - SCOPUS:30644463637

SN - 0272-9172

VL - 875

SP - 177

EP - 182

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

M1 - O5.2

T2 - 2005 Materials Research Society Spring Meeting

Y2 - 28 March 2005 through 1 April 2005

ER -

Hillock formation and thermal stresses in thin Au films on Si substrates

Abstract

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