Hillock formation and thermal stresses in thin Au films on Si substrates

Linda Sauter, T. John Balk, Gerhard Dehm, Julie A. Nucci, Eduard Arzt

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations


The wafer curvature technique was used to analyze stresses in fine-grained, 50 nm to 2 μm thick Au films on silicon substrates between room temperature and 500°C. The microstructural evolution was analyzed by scanning electron microscopy (SEM), focused ion beam (FIB) microscopy and transmission electron microscopy (TEM). In situ heating experiments inside a scanning electron microscope provided a comparison between the morphological development and the stress-temperature behavior of the film. Hillock formation was observed, but it can only partially account for the stress relaxation measured by the wafer curvature technique.

Original languageEnglish
Article numberO5.2
Pages (from-to)177-182
Number of pages6
JournalMaterials Research Society Symposium Proceedings
StatePublished - 2005
Event2005 Materials Research Society Spring Meeting - San Francisco, CA, United States
Duration: Mar 28 2005Apr 1 2005

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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