Humidity sensors with reactively evaporated Al2O3 films as porous dielectrics

Zhi Chen; Mao Chang Jin; Chao Zhen

doi:10.1016/0925-4005(90)85001-F

Humidity sensors with reactively evaporated Al₂O₃ films as porous dielectrics

Zhi Chen, Mao Chang Jin, Chao Zhen

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

The fabrication of humidity sensors employing an Au-porous Al₂O₃-Ni structure with reactively evaporated Al₂O₃ films as porous dielectrics is described. The capacitive and resistive characteristics of the sensors are studied. The sensors are sensitive to moisture levels as low as 1 ppm_v (-76 °C dew point). Experiments have shown that treatment of these reactively evaporated Al₂O₃ films in an appropriate chemical salt solution and subsequent aging experiments through humidity cycles are necessary to fabricate humidity sensors with stable performance.

Original language	English
Pages (from-to)	167-171
Number of pages	5
Journal	Sensors and Actuators B: Chemical
Volume	2
Issue number	3
DOIs	https://doi.org/10.1016/0925-4005(90)85001-F
State	Published - Aug 1990

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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abstract = "The fabrication of humidity sensors employing an Au-porous Al2O3-Ni structure with reactively evaporated Al2O3 films as porous dielectrics is described. The capacitive and resistive characteristics of the sensors are studied. The sensors are sensitive to moisture levels as low as 1 ppmv (-76 °C dew point). Experiments have shown that treatment of these reactively evaporated Al2O3 films in an appropriate chemical salt solution and subsequent aging experiments through humidity cycles are necessary to fabricate humidity sensors with stable performance.",

author = "Zhi Chen and Jin, {Mao Chang} and Chao Zhen",

year = "1990",

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AU - Jin, Mao Chang

AU - Zhen, Chao

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N2 - The fabrication of humidity sensors employing an Au-porous Al2O3-Ni structure with reactively evaporated Al2O3 films as porous dielectrics is described. The capacitive and resistive characteristics of the sensors are studied. The sensors are sensitive to moisture levels as low as 1 ppmv (-76 °C dew point). Experiments have shown that treatment of these reactively evaporated Al2O3 films in an appropriate chemical salt solution and subsequent aging experiments through humidity cycles are necessary to fabricate humidity sensors with stable performance.

AB - The fabrication of humidity sensors employing an Au-porous Al2O3-Ni structure with reactively evaporated Al2O3 films as porous dielectrics is described. The capacitive and resistive characteristics of the sensors are studied. The sensors are sensitive to moisture levels as low as 1 ppmv (-76 °C dew point). Experiments have shown that treatment of these reactively evaporated Al2O3 films in an appropriate chemical salt solution and subsequent aging experiments through humidity cycles are necessary to fabricate humidity sensors with stable performance.

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Humidity sensors with reactively evaporated Al₂O₃ films as porous dielectrics

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