Hybrid Inorganic/organic complementary circuits using PEALD ZnO and ink-jet printed diF-TESADT TFTs

Yuanyuan V. Li; Devin A. Mourey; Marsha A. Loth; Dalong A. Zhao; John E. Anthony; Thomas N. Jackson

doi:10.1016/j.orgel.2013.06.007

Hybrid Inorganic/organic complementary circuits using PEALD ZnO and ink-jet printed diF-TESADT TFTs

Yuanyuan V. Li, Devin A. Mourey, Marsha A. Loth, Dalong A. Zhao, John E. Anthony, Thomas N. Jackson

Chemistry

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We report hybrid organic/inorganic complementary circuits using ink-jet-printed fluorinated 5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) as the p-channel material and zinc oxide deposited by plasma enhanced atomic layer deposition (PEALD) as the n-channel material. Using a mixed solvent system, discrete ink-jet printed diFTESADT OTFTs have field effect mobility as large as 0.4 cm²/V s. PEALD ZnO TFTs typically have field-effect mobility >15 cm²/V s. Using p-type diF-TESADT and n-type ZnO active layers in a simple, 4-mask, 1 ink jet printing step, low temperature (≤ 200 °C process we fabricated complimentary MOS (CMOS) inverters with maximum voltage gain of 35 and subpA leakage currents for both low and high input levels.

Original language	English
Pages (from-to)	2411-2417
Number of pages	7
Journal	Organic Electronics
Volume	14
Issue number	10
DOIs	https://doi.org/10.1016/j.orgel.2013.06.007
State	Published - 2013

Bibliographical note

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Copyright 2019 Elsevier B.V., All rights reserved.

Keywords

Hybrid CMOS
Ink-jet printing
PEALD
Small molecular organic semiconductor
ZnO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biomaterials
General Chemistry
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.orgel.2013.06.007

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title = "Hybrid Inorganic/organic complementary circuits using PEALD ZnO and ink-jet printed diF-TESADT TFTs",

abstract = "We report hybrid organic/inorganic complementary circuits using ink-jet-printed fluorinated 5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) as the p-channel material and zinc oxide deposited by plasma enhanced atomic layer deposition (PEALD) as the n-channel material. Using a mixed solvent system, discrete ink-jet printed diFTESADT OTFTs have field effect mobility as large as 0.4 cm2/V s. PEALD ZnO TFTs typically have field-effect mobility >15 cm2/V s. Using p-type diF-TESADT and n-type ZnO active layers in a simple, 4-mask, 1 ink jet printing step, low temperature (≤ 200 °C process we fabricated complimentary MOS (CMOS) inverters with maximum voltage gain of 35 and subpA leakage currents for both low and high input levels.",

keywords = "Hybrid CMOS, Ink-jet printing, PEALD, Small molecular organic semiconductor, ZnO",

author = "Li, {Yuanyuan V.} and Mourey, {Devin A.} and Loth, {Marsha A.} and Zhao, {Dalong A.} and Anthony, {John E.} and Jackson, {Thomas N.}",

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language = "English",

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AU - Li, Yuanyuan V.

AU - Mourey, Devin A.

AU - Loth, Marsha A.

AU - Zhao, Dalong A.

AU - Anthony, John E.

AU - Jackson, Thomas N.

PY - 2013

Y1 - 2013

N2 - We report hybrid organic/inorganic complementary circuits using ink-jet-printed fluorinated 5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) as the p-channel material and zinc oxide deposited by plasma enhanced atomic layer deposition (PEALD) as the n-channel material. Using a mixed solvent system, discrete ink-jet printed diFTESADT OTFTs have field effect mobility as large as 0.4 cm2/V s. PEALD ZnO TFTs typically have field-effect mobility >15 cm2/V s. Using p-type diF-TESADT and n-type ZnO active layers in a simple, 4-mask, 1 ink jet printing step, low temperature (≤ 200 °C process we fabricated complimentary MOS (CMOS) inverters with maximum voltage gain of 35 and subpA leakage currents for both low and high input levels.

AB - We report hybrid organic/inorganic complementary circuits using ink-jet-printed fluorinated 5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) as the p-channel material and zinc oxide deposited by plasma enhanced atomic layer deposition (PEALD) as the n-channel material. Using a mixed solvent system, discrete ink-jet printed diFTESADT OTFTs have field effect mobility as large as 0.4 cm2/V s. PEALD ZnO TFTs typically have field-effect mobility >15 cm2/V s. Using p-type diF-TESADT and n-type ZnO active layers in a simple, 4-mask, 1 ink jet printing step, low temperature (≤ 200 °C process we fabricated complimentary MOS (CMOS) inverters with maximum voltage gain of 35 and subpA leakage currents for both low and high input levels.

KW - Hybrid CMOS

KW - Ink-jet printing

KW - PEALD

KW - Small molecular organic semiconductor

KW - ZnO

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VL - 14

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JO - Organic Electronics

JF - Organic Electronics

IS - 10

ER -

Hybrid Inorganic/organic complementary circuits using PEALD ZnO and ink-jet printed diF-TESADT TFTs

Abstract

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Keywords

ASJC Scopus subject areas

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