Hydrogen sensors based on Ni/SiO2/Si MOS capacitors

Chi Lu, Zhi Chen, Kozo Saito

Research output: Contribution to journalArticlepeer-review

27 Scopus citations


A novel hydrogen sensor based on Ni/SiO2/Si MOS capacitors were fabricated and characterized at hydrogen concentrations ranging from 50 to 1000 ppm at an operating temperature of 140 °C. The highest response occurs at the same bias voltage (-0.4 V) for all the concentration levels measured and is about 18% at 50 ppm. The response/recovery transients of the Ni-based sensors are similar to those of the Pd-based hydrogen sensors. A Langmuir isotherm model is adapted to explain the observed phenomena, which is in agreement with our experimental results.

Original languageEnglish
Pages (from-to)556-559
Number of pages4
JournalSensors and Actuators, B: Chemical
Issue number2
StatePublished - Mar 26 2007

Bibliographical note

Funding Information:
This work was supported by National Science Foundation (EPSCOR0447479), Department of Energy (DE-FG02-00ER4582 and DE-FG26-04NT42171), and Army Research Laboratory (W911NF-04-2-0023).


  • C-V curve
  • Hydrogen sensor
  • MOS capacitor
  • Ni

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry


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