Abstract
A novel hydrogen sensor based on Ni/SiO2/Si MOS capacitors were fabricated and characterized at hydrogen concentrations ranging from 50 to 1000 ppm at an operating temperature of 140 °C. The highest response occurs at the same bias voltage (-0.4 V) for all the concentration levels measured and is about 18% at 50 ppm. The response/recovery transients of the Ni-based sensors are similar to those of the Pd-based hydrogen sensors. A Langmuir isotherm model is adapted to explain the observed phenomena, which is in agreement with our experimental results.
Original language | English |
---|---|
Pages (from-to) | 556-559 |
Number of pages | 4 |
Journal | Sensors and Actuators, B: Chemical |
Volume | 122 |
Issue number | 2 |
DOIs | |
State | Published - Mar 26 2007 |
Bibliographical note
Funding Information:This work was supported by National Science Foundation (EPSCOR0447479), Department of Energy (DE-FG02-00ER4582 and DE-FG26-04NT42171), and Army Research Laboratory (W911NF-04-2-0023).
Funding
This work was supported by National Science Foundation (EPSCOR0447479), Department of Energy (DE-FG02-00ER4582 and DE-FG26-04NT42171), and Army Research Laboratory (W911NF-04-2-0023).
Funders | Funder number |
---|---|
U.S. Department of Energy Chinese Academy of Sciences Guangzhou Municipal Science and Technology Project Oak Ridge National Laboratory Extreme Science and Engineering Discovery Environment National Science Foundation National Energy Research Scientific Computing Center National Natural Science Foundation of China | EPSCOR0447479 |
U.S. Department of Energy Chinese Academy of Sciences Guangzhou Municipal Science and Technology Project Oak Ridge National Laboratory Extreme Science and Engineering Discovery Environment National Science Foundation National Energy Research Scientific Computing Center National Natural Science Foundation of China | |
U.S. Department of Energy Oak Ridge National Laboratory U.S. Department of Energy National Science Foundation National Energy Research Scientific Computing Center | DE-FG02-00ER4582, DE-FG26-04NT42171 |
U.S. Department of Energy Oak Ridge National Laboratory U.S. Department of Energy National Science Foundation National Energy Research Scientific Computing Center | |
Army Research Laboratory | W911NF-04-2-0023 |
Army Research Laboratory |
Keywords
- C-V curve
- Hydrogen sensor
- MOS capacitor
- Ni
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering
- Materials Chemistry