Hydrogen sensors based on Ni/SiO2/Si MOS capacitors

Chi Lu, Zhi Chen, Kozo Saito

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

A novel hydrogen sensor based on Ni/SiO2/Si MOS capacitors were fabricated and characterized at hydrogen concentrations ranging from 50 to 1000 ppm at an operating temperature of 140 °C. The highest response occurs at the same bias voltage (-0.4 V) for all the concentration levels measured and is about 18% at 50 ppm. The response/recovery transients of the Ni-based sensors are similar to those of the Pd-based hydrogen sensors. A Langmuir isotherm model is adapted to explain the observed phenomena, which is in agreement with our experimental results.

Original languageEnglish
Pages (from-to)556-559
Number of pages4
JournalSensors and Actuators, B: Chemical
Volume122
Issue number2
DOIs
StatePublished - Mar 26 2007

Bibliographical note

Funding Information:
This work was supported by National Science Foundation (EPSCOR0447479), Department of Energy (DE-FG02-00ER4582 and DE-FG26-04NT42171), and Army Research Laboratory (W911NF-04-2-0023).

Funding

This work was supported by National Science Foundation (EPSCOR0447479), Department of Energy (DE-FG02-00ER4582 and DE-FG26-04NT42171), and Army Research Laboratory (W911NF-04-2-0023).

FundersFunder number
U.S. Department of Energy Chinese Academy of Sciences Guangzhou Municipal Science and Technology Project Oak Ridge National Laboratory Extreme Science and Engineering Discovery Environment National Science Foundation National Energy Research Scientific Computing Center National Natural Science Foundation of ChinaEPSCOR0447479
U.S. Department of Energy Chinese Academy of Sciences Guangzhou Municipal Science and Technology Project Oak Ridge National Laboratory Extreme Science and Engineering Discovery Environment National Science Foundation National Energy Research Scientific Computing Center National Natural Science Foundation of China
U.S. Department of Energy Oak Ridge National Laboratory U.S. Department of Energy National Science Foundation National Energy Research Scientific Computing CenterDE-FG02-00ER4582, DE-FG26-04NT42171
U.S. Department of Energy Oak Ridge National Laboratory U.S. Department of Energy National Science Foundation National Energy Research Scientific Computing Center
Army Research LaboratoryW911NF-04-2-0023
Army Research Laboratory

    Keywords

    • C-V curve
    • Hydrogen sensor
    • MOS capacitor
    • Ni

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Instrumentation
    • Condensed Matter Physics
    • Surfaces, Coatings and Films
    • Metals and Alloys
    • Electrical and Electronic Engineering
    • Materials Chemistry

    Fingerprint

    Dive into the research topics of 'Hydrogen sensors based on Ni/SiO2/Si MOS capacitors'. Together they form a unique fingerprint.

    Cite this