Abstract
A novel hydrogen sensor based on Ni/SiO2/Si MOS capacitors were fabricated and characterized at hydrogen concentrations ranging from 50 to 1000 ppm at an operating temperature of 140 °C. The highest response occurs at the same bias voltage (-0.4 V) for all the concentration levels measured and is about 18% at 50 ppm. The response/recovery transients of the Ni-based sensors are similar to those of the Pd-based hydrogen sensors. A Langmuir isotherm model is adapted to explain the observed phenomena, which is in agreement with our experimental results.
| Original language | English |
|---|---|
| Pages (from-to) | 556-559 |
| Number of pages | 4 |
| Journal | Sensors and Actuators, B: Chemical |
| Volume | 122 |
| Issue number | 2 |
| DOIs | |
| State | Published - Mar 26 2007 |
Bibliographical note
Funding Information:This work was supported by National Science Foundation (EPSCOR0447479), Department of Energy (DE-FG02-00ER4582 and DE-FG26-04NT42171), and Army Research Laboratory (W911NF-04-2-0023).
Keywords
- C-V curve
- Hydrogen sensor
- MOS capacitor
- Ni
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering
- Materials Chemistry