The relationship between proton-induced defects and gate-lag in GaN high-electron mobility transistors (HEMTs) is examined using simulations and experiments. Surface traps are primarily responsible for the pre-irradiation gate-lag. Experimental data and detailed two-dimensional device simulations demonstrate that bulk traps increase the amount of observed gate-lag after irradiation to high-proton fluences.
|Number of pages||4|
|Journal||IEEE Transactions on Nuclear Science|
|State||Published - Dec 2009|
Bibliographical noteFunding Information:
Manuscript received July 17, 2009; revised September 10, 2009. Current version published December 09, 2009. This work was supported in part by the Air Force Office of Scientific Research and the Office of Naval Research through MURI programs and by Lockheed Martin.
- Deep-level traps
- Displacement damage
- High lectron mobility transistor (HEMTs)
- Polarization charge
- Proton radiation
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering