Impact of proton irradiation-induced bulk defects on gate-lag in GaN HEMTs

Aditya Kalavagunta, M. Silvestri, M. J. Beck, S. K. Dixit, Ronald D. Schrimpf, R. A. Reed, D. M. Fleetwood, L. Shen, U. K. Mishra

Research output: Contribution to journalArticlepeer-review

31 Scopus citations


The relationship between proton-induced defects and gate-lag in GaN high-electron mobility transistors (HEMTs) is examined using simulations and experiments. Surface traps are primarily responsible for the pre-irradiation gate-lag. Experimental data and detailed two-dimensional device simulations demonstrate that bulk traps increase the amount of observed gate-lag after irradiation to high-proton fluences.

Original languageEnglish
Article number5341504
Pages (from-to)3192-3195
Number of pages4
JournalIEEE Transactions on Nuclear Science
Issue number6
StatePublished - Dec 2009

Bibliographical note

Funding Information:
Manuscript received July 17, 2009; revised September 10, 2009. Current version published December 09, 2009. This work was supported in part by the Air Force Office of Scientific Research and the Office of Naval Research through MURI programs and by Lockheed Martin.


  • Deep-level traps
  • Displacement damage
  • Gan
  • High lectron mobility transistor (HEMTs)
  • Polarization charge
  • Proton radiation

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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