Impact of proton irradiation-induced bulk defects on gate-lag in GaN HEMTs

Aditya Kalavagunta; M. Silvestri; M. J. Beck; S. K. Dixit; Ronald D. Schrimpf; R. A. Reed; D. M. Fleetwood; L. Shen; U. K. Mishra

doi:10.1109/TNS.2009.2034156

Impact of proton irradiation-induced bulk defects on gate-lag in GaN HEMTs

Aditya Kalavagunta, M. Silvestri, M. J. Beck, S. K. Dixit, Ronald D. Schrimpf, R. A. Reed, D. M. Fleetwood, L. Shen, U. K. Mishra

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

The relationship between proton-induced defects and gate-lag in GaN high-electron mobility transistors (HEMTs) is examined using simulations and experiments. Surface traps are primarily responsible for the pre-irradiation gate-lag. Experimental data and detailed two-dimensional device simulations demonstrate that bulk traps increase the amount of observed gate-lag after irradiation to high-proton fluences.

Original language	English
Article number	5341504
Pages (from-to)	3192-3195
Number of pages	4
Journal	IEEE Transactions on Nuclear Science
Volume	56
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2009.2034156
State	Published - Dec 2009

Bibliographical note

Funding Information:
Manuscript received July 17, 2009; revised September 10, 2009. Current version published December 09, 2009. This work was supported in part by the Air Force Office of Scientific Research and the Office of Naval Research through MURI programs and by Lockheed Martin.

Keywords

Deep-level traps
Displacement damage
Gan
High lectron mobility transistor (HEMTs)
Polarization charge
Proton radiation

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2009.2034156

Cite this

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title = "Impact of proton irradiation-induced bulk defects on gate-lag in GaN HEMTs",

abstract = "The relationship between proton-induced defects and gate-lag in GaN high-electron mobility transistors (HEMTs) is examined using simulations and experiments. Surface traps are primarily responsible for the pre-irradiation gate-lag. Experimental data and detailed two-dimensional device simulations demonstrate that bulk traps increase the amount of observed gate-lag after irradiation to high-proton fluences.",

keywords = "Deep-level traps, Displacement damage, Gan, High lectron mobility transistor (HEMTs), Polarization charge, Proton radiation",

author = "Aditya Kalavagunta and M. Silvestri and Beck, {M. J.} and Dixit, {S. K.} and Schrimpf, {Ronald D.} and Reed, {R. A.} and Fleetwood, {D. M.} and L. Shen and Mishra, {U. K.}",

note = "Funding Information: Manuscript received July 17, 2009; revised September 10, 2009. Current version published December 09, 2009. This work was supported in part by the Air Force Office of Scientific Research and the Office of Naval Research through MURI programs and by Lockheed Martin.",

year = "2009",

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doi = "10.1109/TNS.2009.2034156",

language = "English",

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T1 - Impact of proton irradiation-induced bulk defects on gate-lag in GaN HEMTs

AU - Kalavagunta, Aditya

AU - Silvestri, M.

AU - Beck, M. J.

AU - Dixit, S. K.

AU - Schrimpf, Ronald D.

AU - Reed, R. A.

AU - Fleetwood, D. M.

AU - Shen, L.

AU - Mishra, U. K.

N1 - Funding Information: Manuscript received July 17, 2009; revised September 10, 2009. Current version published December 09, 2009. This work was supported in part by the Air Force Office of Scientific Research and the Office of Naval Research through MURI programs and by Lockheed Martin.

PY - 2009/12

Y1 - 2009/12

N2 - The relationship between proton-induced defects and gate-lag in GaN high-electron mobility transistors (HEMTs) is examined using simulations and experiments. Surface traps are primarily responsible for the pre-irradiation gate-lag. Experimental data and detailed two-dimensional device simulations demonstrate that bulk traps increase the amount of observed gate-lag after irradiation to high-proton fluences.

AB - The relationship between proton-induced defects and gate-lag in GaN high-electron mobility transistors (HEMTs) is examined using simulations and experiments. Surface traps are primarily responsible for the pre-irradiation gate-lag. Experimental data and detailed two-dimensional device simulations demonstrate that bulk traps increase the amount of observed gate-lag after irradiation to high-proton fluences.

KW - Deep-level traps

KW - Displacement damage

KW - Gan

KW - High lectron mobility transistor (HEMTs)

KW - Polarization charge

KW - Proton radiation

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Impact of proton irradiation-induced bulk defects on gate-lag in GaN HEMTs

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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