TY - JOUR
T1 - Importance of spin-orbit interaction for the electron spin relaxation in organic semiconductors
AU - Nuccio, L.
AU - Willis, M.
AU - Schulz, L.
AU - Fratini, S.
AU - Messina, F.
AU - D'Amico, M.
AU - Pratt, F. L.
AU - Lord, J. S.
AU - McKenzie, I.
AU - Loth, M.
AU - Purushothaman, B.
AU - Anthony, J.
AU - Heeney, M.
AU - Wilson, R. M.
AU - Hernández, I.
AU - Cannas, M.
AU - Sedlak, K.
AU - Kreouzis, T.
AU - Gillin, W. P.
AU - Bernhard, C.
AU - Drew, A. J.
PY - 2013/5/23
Y1 - 2013/5/23
N2 - Despite the great interest organic spintronics has recently attracted, there is only a partial understanding of the fundamental physics behind electron spin relaxation in organic semiconductors. Mechanisms based on hyperfine interaction have been demonstrated, but the role of the spin-orbit interaction remains elusive. Here, we report muon spin spectroscopy and time-resolved photoluminescence measurements on two series of molecular semiconductors in which the strength of the spin-orbit interaction has been systematically modified with a targeted chemical substitution of different atoms at a particular molecular site. We find that the spin-orbit interaction is a significant source of electron spin relaxation in these materials.
AB - Despite the great interest organic spintronics has recently attracted, there is only a partial understanding of the fundamental physics behind electron spin relaxation in organic semiconductors. Mechanisms based on hyperfine interaction have been demonstrated, but the role of the spin-orbit interaction remains elusive. Here, we report muon spin spectroscopy and time-resolved photoluminescence measurements on two series of molecular semiconductors in which the strength of the spin-orbit interaction has been systematically modified with a targeted chemical substitution of different atoms at a particular molecular site. We find that the spin-orbit interaction is a significant source of electron spin relaxation in these materials.
UR - https://www.scopus.com/pages/publications/84878396158
UR - https://www.scopus.com/pages/publications/84878396158#tab=citedBy
U2 - 10.1103/PhysRevLett.110.216602
DO - 10.1103/PhysRevLett.110.216602
M3 - Article
AN - SCOPUS:84878396158
SN - 0031-9007
VL - 110
JO - Physical Review Letters
JF - Physical Review Letters
IS - 21
M1 - 216602
ER -