The presence of Schottky barrier near back contact limits the hole movement which influences the current-voltage characteristics and deteriorates the Voc-deficit as well. In this work, a set of CZTSe solar cells were fabricated by DC magnetron sputtering and investigated for the back contact interface between CZTSe/MoSe2 and Mo metal contact in an effort to improve a back contact barrier. By incorporating nanoscale Ge bi-layers below and below the absorber, a barrier height is considerably improved. To extract a back contact barrier height, a temperature-dependent behavior of CZTSe: Ge bi-layer devices is characterized and compared to CZTSe monolayer devices.
|Title of host publication||2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC|
|Number of pages||3|
|State||Published - Nov 26 2018|
|Event||7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States|
Duration: Jun 10 2018 → Jun 15 2018
|Name||2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC|
|Conference||7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018|
|Period||6/10/18 → 6/15/18|
Bibliographical noteFunding Information:
Authors acknowledges the generous support by the Louisville Gas & Energy and Kentucky Utility Foundation.
© 2018 IEEE.
- Back contact
- schottky barrier
ASJC Scopus subject areas
- Energy Engineering and Power Technology
- Renewable Energy, Sustainability and the Environment
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials