Improved Back Contact Barrier of CZTSe solar cells by incorporating nanoscale Ge bi-layers

Sanghyun Lee; Kent J. Price; Edgardo Saucedo; Sergio Giraldo

doi:10.1109/PVSC.2018.8547770

Improved Back Contact Barrier of CZTSe solar cells by incorporating nanoscale Ge bi-layers

Sanghyun Lee
, Kent J. Price
, Edgardo Saucedo
, Sergio Giraldo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

The presence of Schottky barrier near back contact limits the hole movement which influences the current-voltage characteristics and deteriorates the Voc-deficit as well. In this work, a set of CZTSe solar cells were fabricated by DC magnetron sputtering and investigated for the back contact interface between CZTSe/MoSe2 and Mo metal contact in an effort to improve a back contact barrier. By incorporating nanoscale Ge bi-layers below and below the absorber, a barrier height is considerably improved. To extract a back contact barrier height, a temperature-dependent behavior of CZTSe: Ge bi-layer devices is characterized and compared to CZTSe monolayer devices.

Original language	English
Title of host publication	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Pages	3712-3714
Number of pages	3
ISBN (Electronic)	9781538685297
DOIs	https://doi.org/10.1109/PVSC.2018.8547770
State	Published - Nov 26 2018
Event	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: Jun 10 2018 → Jun 15 2018

Publication series

Name	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

Conference

Conference	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/Territory	United States
City	Waikoloa Village
Period	6/10/18 → 6/15/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Funding

Authors acknowledges the generous support by the Louisville Gas & Energy and Kentucky Utility Foundation.

Funders
Louisville Gas & Energy and Kentucky Utility Foundation

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Back contact
cZTSe
kesterite
schottky barrier

ASJC Scopus subject areas

Energy Engineering and Power Technology
Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2018.8547770

Cite this

Lee, S., Price, K. J., Saucedo, E., & Giraldo, S. (2018). Improved Back Contact Barrier of CZTSe solar cells by incorporating nanoscale Ge bi-layers. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 3712-3714). Article 8547770 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). https://doi.org/10.1109/PVSC.2018.8547770

Lee, Sanghyun ; Price, Kent J. ; Saucedo, Edgardo et al. / Improved Back Contact Barrier of CZTSe solar cells by incorporating nanoscale Ge bi-layers. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. 2018. pp. 3712-3714 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

@inproceedings{2333f3243d9744f88f356961d9142694,

title = "Improved Back Contact Barrier of CZTSe solar cells by incorporating nanoscale Ge bi-layers",

abstract = "The presence of Schottky barrier near back contact limits the hole movement which influences the current-voltage characteristics and deteriorates the Voc-deficit as well. In this work, a set of CZTSe solar cells were fabricated by DC magnetron sputtering and investigated for the back contact interface between CZTSe/MoSe2 and Mo metal contact in an effort to improve a back contact barrier. By incorporating nanoscale Ge bi-layers below and below the absorber, a barrier height is considerably improved. To extract a back contact barrier height, a temperature-dependent behavior of CZTSe: Ge bi-layer devices is characterized and compared to CZTSe monolayer devices.",

keywords = "Back contact, cZTSe, kesterite, schottky barrier",

author = "Sanghyun Lee and Price, \{Kent J.\} and Edgardo Saucedo and Sergio Giraldo",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",

year = "2018",

month = nov,

day = "26",

doi = "10.1109/PVSC.2018.8547770",

language = "English",

series = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",

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booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",

}

Lee, S, Price, KJ, Saucedo, E & Giraldo, S 2018, Improved Back Contact Barrier of CZTSe solar cells by incorporating nanoscale Ge bi-layers. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8547770, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 3712-3714, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 6/10/18. https://doi.org/10.1109/PVSC.2018.8547770

Improved Back Contact Barrier of CZTSe solar cells by incorporating nanoscale Ge bi-layers. / Lee, Sanghyun; Price, Kent J.; Saucedo, Edgardo et al.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. 2018. p. 3712-3714 8547770 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Improved Back Contact Barrier of CZTSe solar cells by incorporating nanoscale Ge bi-layers

AU - Lee, Sanghyun

AU - Price, Kent J.

AU - Saucedo, Edgardo

AU - Giraldo, Sergio

PY - 2018/11/26

Y1 - 2018/11/26

N2 - The presence of Schottky barrier near back contact limits the hole movement which influences the current-voltage characteristics and deteriorates the Voc-deficit as well. In this work, a set of CZTSe solar cells were fabricated by DC magnetron sputtering and investigated for the back contact interface between CZTSe/MoSe2 and Mo metal contact in an effort to improve a back contact barrier. By incorporating nanoscale Ge bi-layers below and below the absorber, a barrier height is considerably improved. To extract a back contact barrier height, a temperature-dependent behavior of CZTSe: Ge bi-layer devices is characterized and compared to CZTSe monolayer devices.

AB - The presence of Schottky barrier near back contact limits the hole movement which influences the current-voltage characteristics and deteriorates the Voc-deficit as well. In this work, a set of CZTSe solar cells were fabricated by DC magnetron sputtering and investigated for the back contact interface between CZTSe/MoSe2 and Mo metal contact in an effort to improve a back contact barrier. By incorporating nanoscale Ge bi-layers below and below the absorber, a barrier height is considerably improved. To extract a back contact barrier height, a temperature-dependent behavior of CZTSe: Ge bi-layer devices is characterized and compared to CZTSe monolayer devices.

KW - Back contact

KW - cZTSe

KW - kesterite

KW - schottky barrier

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DO - 10.1109/PVSC.2018.8547770

M3 - Conference contribution

AN - SCOPUS:85059893570

T3 - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

SP - 3712

EP - 3714

BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018

Y2 - 10 June 2018 through 15 June 2018

ER -

Lee S, Price KJ, Saucedo E, Giraldo S. Improved Back Contact Barrier of CZTSe solar cells by incorporating nanoscale Ge bi-layers. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. 2018. p. 3712-3714. 8547770. (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). doi: 10.1109/PVSC.2018.8547770

Improved Back Contact Barrier of CZTSe solar cells by incorporating nanoscale Ge bi-layers

Abstract

Publication series

Conference

Bibliographical note

Funding

UN SDGs

Keywords

ASJC Scopus subject areas

Access to Document

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