We fabricated and characterized CZTSe: Nanolayer Ge (<10 nm) thin film solar cells to quantitatively demonstrate an exact device model of quantum efficiency for Ge doped CZTSe devices. The linear electric field model is developed used to fit the unique quantum efficiency as compared to empirical data at forward bias condition. This model is characterized with a consistent set of parameters from a series of measurements and literature. Using the analytical modeling method, the carrier collection profile in the absorber is calculated and closely fitted by developed mathematical expressions to identify the carrier dynamics during the quantum efficiency measurement.
|Title of host publication||2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC|
|Number of pages||3|
|State||Published - Nov 26 2018|
|Event||7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States|
Duration: Jun 10 2018 → Jun 15 2018
|Name||2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC|
|Conference||7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018|
|Period||6/10/18 → 6/15/18|
Bibliographical noteFunding Information:
Authors acknowledges the generous support by the Louisville Gas & Energy and Kentucky Utility.
© 2018 IEEE.
- quantum efficiency
ASJC Scopus subject areas
- Energy Engineering and Power Technology
- Renewable Energy, Sustainability and the Environment
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials