Improved Device Models of CZTSe: Nanolayer Ge solar cells with Quantum Efficiency

Sanghyun Lee; Kent J. Price; Edgardo Saucedo; Sergio Giraldo

doi:10.1109/PVSC.2018.8548287

Improved Device Models of CZTSe: Nanolayer Ge solar cells with Quantum Efficiency

Sanghyun Lee, Kent J. Price, Edgardo Saucedo, Sergio Giraldo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

We fabricated and characterized CZTSe: Nanolayer Ge (<10 nm) thin film solar cells to quantitatively demonstrate an exact device model of quantum efficiency for Ge doped CZTSe devices. The linear electric field model is developed used to fit the unique quantum efficiency as compared to empirical data at forward bias condition. This model is characterized with a consistent set of parameters from a series of measurements and literature. Using the analytical modeling method, the carrier collection profile in the absorber is calculated and closely fitted by developed mathematical expressions to identify the carrier dynamics during the quantum efficiency measurement.

Original language	English
Title of host publication	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Pages	3000-3002
Number of pages	3
ISBN (Electronic)	9781538685297
DOIs	https://doi.org/10.1109/PVSC.2018.8548287
State	Published - Nov 26 2018
Event	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: Jun 10 2018 → Jun 15 2018

Publication series

Name	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

Conference

Conference	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/Territory	United States
City	Waikoloa Village
Period	6/10/18 → 6/15/18

Bibliographical note

Funding Information:
Authors acknowledges the generous support by the Louisville Gas & Energy and Kentucky Utility.

Publisher Copyright:
© 2018 IEEE.

Keywords

CZTSe
kesterite
modeling
quantum efficiency

ASJC Scopus subject areas

Energy Engineering and Power Technology
Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PVSC.2018.8548287

Cite this

Lee, S., Price, K. J., Saucedo, E., & Giraldo, S. (2018). Improved Device Models of CZTSe: Nanolayer Ge solar cells with Quantum Efficiency. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 3000-3002). [8548287] (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). https://doi.org/10.1109/PVSC.2018.8548287

Lee, Sanghyun ; Price, Kent J. ; Saucedo, Edgardo et al. / Improved Device Models of CZTSe : Nanolayer Ge solar cells with Quantum Efficiency. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. 2018. pp. 3000-3002 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

@inproceedings{b15bed78982b47dbb8c8850261d76b89,

title = "Improved Device Models of CZTSe: Nanolayer Ge solar cells with Quantum Efficiency",

abstract = "We fabricated and characterized CZTSe: Nanolayer Ge (<10 nm) thin film solar cells to quantitatively demonstrate an exact device model of quantum efficiency for Ge doped CZTSe devices. The linear electric field model is developed used to fit the unique quantum efficiency as compared to empirical data at forward bias condition. This model is characterized with a consistent set of parameters from a series of measurements and literature. Using the analytical modeling method, the carrier collection profile in the absorber is calculated and closely fitted by developed mathematical expressions to identify the carrier dynamics during the quantum efficiency measurement.",

keywords = "CZTSe, kesterite, modeling, quantum efficiency",

author = "Sanghyun Lee and Price, {Kent J.} and Edgardo Saucedo and Sergio Giraldo",

note = "Funding Information: Authors acknowledges the generous support by the Louisville Gas & Energy and Kentucky Utility. Publisher Copyright: {\textcopyright} 2018 IEEE.; null ; Conference date: 10-06-2018 Through 15-06-2018",

year = "2018",

month = nov,

day = "26",

doi = "10.1109/PVSC.2018.8548287",

language = "English",

series = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",

pages = "3000--3002",

booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",

}

Lee, S, Price, KJ, Saucedo, E & Giraldo, S 2018, Improved Device Models of CZTSe: Nanolayer Ge solar cells with Quantum Efficiency. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8548287, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 3000-3002, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 6/10/18. https://doi.org/10.1109/PVSC.2018.8548287

Improved Device Models of CZTSe : Nanolayer Ge solar cells with Quantum Efficiency. / Lee, Sanghyun; Price, Kent J.; Saucedo, Edgardo et al.

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. 2018. p. 3000-3002 8548287 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Improved Device Models of CZTSe

AU - Lee, Sanghyun

AU - Price, Kent J.

AU - Saucedo, Edgardo

AU - Giraldo, Sergio

PY - 2018/11/26

Y1 - 2018/11/26

N2 - We fabricated and characterized CZTSe: Nanolayer Ge (<10 nm) thin film solar cells to quantitatively demonstrate an exact device model of quantum efficiency for Ge doped CZTSe devices. The linear electric field model is developed used to fit the unique quantum efficiency as compared to empirical data at forward bias condition. This model is characterized with a consistent set of parameters from a series of measurements and literature. Using the analytical modeling method, the carrier collection profile in the absorber is calculated and closely fitted by developed mathematical expressions to identify the carrier dynamics during the quantum efficiency measurement.

AB - We fabricated and characterized CZTSe: Nanolayer Ge (<10 nm) thin film solar cells to quantitatively demonstrate an exact device model of quantum efficiency for Ge doped CZTSe devices. The linear electric field model is developed used to fit the unique quantum efficiency as compared to empirical data at forward bias condition. This model is characterized with a consistent set of parameters from a series of measurements and literature. Using the analytical modeling method, the carrier collection profile in the absorber is calculated and closely fitted by developed mathematical expressions to identify the carrier dynamics during the quantum efficiency measurement.

KW - CZTSe

KW - kesterite

KW - modeling

KW - quantum efficiency

UR - http://www.scopus.com/inward/record.url?scp=85059901916&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85059901916&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2018.8548287

DO - 10.1109/PVSC.2018.8548287

M3 - Conference contribution

AN - SCOPUS:85059901916

T3 - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

SP - 3000

EP - 3002

BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

Y2 - 10 June 2018 through 15 June 2018

ER -

Lee S, Price KJ, Saucedo E, Giraldo S. Improved Device Models of CZTSe: Nanolayer Ge solar cells with Quantum Efficiency. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. 2018. p. 3000-3002. 8548287. (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). doi: 10.1109/PVSC.2018.8548287

Improved Device Models of CZTSe: Nanolayer Ge solar cells with Quantum Efficiency

Abstract

Publication series

Conference

Bibliographical note

Keywords

ASJC Scopus subject areas

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this