A sparse-sampling algorithm has been developed for two-dimensional, spatial-phase-locked electron-beam lithography (SPLEBL). This algorithm corrects for field shift, scale and rotation errors. The algorithm can be used with a scintillating polymeric global-fiducial grid distributed over the substrate. An experimental evaluation of the sparse-sampling algorithm indicates that sub-10-nm pattern-placement accuracy can be obtained with this mode of SPLEBL.
|Number of pages||4|
|State||Published - Jun 2000|
|Event||25th International Conference on Micro- and Nano-Engineering - Rome, Italy|
Duration: Sep 21 1999 → Sep 23 1999
Bibliographical noteFunding Information:
Acknowledgements: The authors gratefully acknowledge J. Carter, J. Daley, and M. Mondol for their valuable technical assistance. This research was sponsored by the Army Research Office, and the Defense Advanced Research Projects Agency.
Copyright 2017 Elsevier B.V., All rights reserved.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering