Improved pattern-placement accuracy in e-beam lithography via sparse-sample spatial-phase locking

J. T. Hastings, F. Zhang, J. G. Goodberlet, Henry Smith

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations


A sparse-sampling algorithm has been developed for two-dimensional, spatial-phase-locked electron-beam lithography (SPLEBL). This algorithm corrects for field shift, scale and rotation errors. The algorithm can be used with a scintillating polymeric global-fiducial grid distributed over the substrate. An experimental evaluation of the sparse-sampling algorithm indicates that sub-10-nm pattern-placement accuracy can be obtained with this mode of SPLEBL.

Original languageEnglish
Pages (from-to)361-364
Number of pages4
JournalMicroelectronic Engineering
Issue number1
StatePublished - Jun 2000
Event25th International Conference on Micro- and Nano-Engineering - Rome, Italy
Duration: Sep 21 1999Sep 23 1999

Bibliographical note

Funding Information:
Acknowledgements: The authors gratefully acknowledge J. Carter, J. Daley, and M. Mondol for their valuable technical assistance. This research was sponsored by the Army Research Office, and the Defense Advanced Research Projects Agency.

Copyright 2017 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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