Improved pattern-placement accuracy in e-beam lithography via sparse-sample spatial-phase locking

J. T. Hastings; F. Zhang; J. G. Goodberlet; Henry Smith

doi:10.1016/S0167-9317(00)00334-8

Improved pattern-placement accuracy in e-beam lithography via sparse-sample spatial-phase locking

J. T. Hastings, F. Zhang, J. G. Goodberlet, Henry Smith

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

A sparse-sampling algorithm has been developed for two-dimensional, spatial-phase-locked electron-beam lithography (SPLEBL). This algorithm corrects for field shift, scale and rotation errors. The algorithm can be used with a scintillating polymeric global-fiducial grid distributed over the substrate. An experimental evaluation of the sparse-sampling algorithm indicates that sub-10-nm pattern-placement accuracy can be obtained with this mode of SPLEBL.

Original language	English
Pages (from-to)	361-364
Number of pages	4
Journal	Microelectronic Engineering
Volume	53
Issue number	1
DOIs	https://doi.org/10.1016/S0167-9317(00)00334-8
State	Published - Jun 2000
Event	25th International Conference on Micro- and Nano-Engineering - Rome, Italy Duration: Sep 21 1999 → Sep 23 1999

Bibliographical note

Funding Information:
Acknowledgements: The authors gratefully acknowledge J. Carter, J. Daley, and M. Mondol for their valuable technical assistance. This research was sponsored by the Army Research Office, and the Defense Advanced Research Projects Agency.

Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0167-9317(00)00334-8

Cite this

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abstract = "A sparse-sampling algorithm has been developed for two-dimensional, spatial-phase-locked electron-beam lithography (SPLEBL). This algorithm corrects for field shift, scale and rotation errors. The algorithm can be used with a scintillating polymeric global-fiducial grid distributed over the substrate. An experimental evaluation of the sparse-sampling algorithm indicates that sub-10-nm pattern-placement accuracy can be obtained with this mode of SPLEBL.",

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note = "Funding Information: Acknowledgements: The authors gratefully acknowledge J. Carter, J. Daley, and M. Mondol for their valuable technical assistance. This research was sponsored by the Army Research Office, and the Defense Advanced Research Projects Agency. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.; 25th International Conference on Micro- and Nano-Engineering ; Conference date: 21-09-1999 Through 23-09-1999",

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AU - Smith, Henry

N1 - Funding Information: Acknowledgements: The authors gratefully acknowledge J. Carter, J. Daley, and M. Mondol for their valuable technical assistance. This research was sponsored by the Army Research Office, and the Defense Advanced Research Projects Agency. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.

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AB - A sparse-sampling algorithm has been developed for two-dimensional, spatial-phase-locked electron-beam lithography (SPLEBL). This algorithm corrects for field shift, scale and rotation errors. The algorithm can be used with a scintillating polymeric global-fiducial grid distributed over the substrate. An experimental evaluation of the sparse-sampling algorithm indicates that sub-10-nm pattern-placement accuracy can be obtained with this mode of SPLEBL.

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T2 - 25th International Conference on Micro- and Nano-Engineering

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ER -

Improved pattern-placement accuracy in e-beam lithography via sparse-sample spatial-phase locking

Abstract

Bibliographical note

ASJC Scopus subject areas

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