This paper discusses new experimental findings critical for process integration of deuterium post-metal anneals to improve channel hot carrier reliability in manufacturing multilevel metal CMOS integrated circuits. Detailed account of the deuterium process optimization experiments varying temperature, time, and ambient Is given. Specifically, the first demonstration of the large hydrogen/deuterium isotope effect for multilevel metal/dielectric MOS systems is reported. Previous accounts of the isotope effect had been limited to CMOS structures with one-level of dielectric/metal and to about a 10 fold improvement in reliability. Deuterium, instead of hydrogen is introduced via an optimized post-metal anneal process to achieve a 50-100 fold improvement in transistor channel hot carrier lifetime. The benefits of the deuterium anneal art still observed even if the post-metal anneal is followed by the final SiN cap wafer passivation process. It is concluded that the deuterium post-metal anneal process is suitable for manufacturing high performance CMOS products and fully compatible with traditional integrated circuit processes.
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - Nov 1998|
Bibliographical noteFunding Information:
Manuscript received April 1, 1998; revised July 30, 1998. The work of K. Hess was supported by the Office of Naval Research and the Army Research Office. The work of J. Lee was supported by the Office of Naval Research and the Beckmann Institute for Advanced Science and Technology. I. C. Kizilyalli, B. Kotzias, and S. Chetlur are with the Lucent Technologies, Bell Laboratories, Orlando, FL 32819 USA (e-mail: firstname.lastname@example.org). G. C. Abeln, Z. Chen, J. Lee, J. W. Lyding, and K. Hess are with the Beckman Institute, University of Illinois, Urbana, IL 61801 USA. G. Weber is with the Lucent Technologies, Bell Laboratories, Murray Hill, NJ 07974 USA. Publisher Item Identifier S 0741-3106(98)08496-1.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering