Abstract
The development of in situ growth methods for the fabrication of high-quality perovskite single-crystal thin films (SCTFs) directly on hole-transport layers (HTLs) to boost the performance of optoelectronic devices is critically important. However, the fabrication of large-area high-quality SCTFs with thin thickness still remains a significant challenge due to the elusive growth mechanism of this process. In this work, the influence of three key factors on in situ growth of high-quality large-size MAPbBr3 SCTFs on HTLs is investigated. An optimal “sweet spot” is determined: low interface energy between the precursor solution and substrate, a slow heating rate, and a moderate precursor solution concentration. As a result, the as-obtained perovskite SCTFs with a thickness of 540 nm achieve a record area to thickness ratio of 1.94 × 104 mm, a record X-ray diffraction peak full width at half maximum of 0.017°, and an ultralong carrier lifetime of 1552 ns. These characteristics enable the as-obtained perovskite SCTFs to exhibit a record carrier mobility of 141 cm2 V−1 s−1 and good long-term structural stability over 360 days.
| Original language | English |
|---|---|
| Article number | 2104788 |
| Journal | Advanced Science |
| Volume | 9 |
| Issue number | 13 |
| DOIs | |
| State | Published - May 5 2022 |
Bibliographical note
Funding Information:X.T. and Z.W. contributed equally to this work. K.W. and DW are grateful for the support from National Key Research and Development Program (No. 2017YFE0120400, No. 2019YFB1704600), National Natural Science Foundation of China (No. 61875082, No. 61905107), Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting (No. 2017KSYS007), Guangdong‐Hong Kong‐Macao Joint Laboratory (No. 2019B121205001), Innovation Project of Department of Education of Guangdong Province (No. 2019KTSCX157) and Shenzhen Innovation Project (No. JCYJ20190809152411655, No. JCYJ20210324104413036). F.Y. is grateful for the support from National Science Foundation (CMMI‐1854554 and CBET‐2018411). W.C.H.C. would like to acknowledge the financial support from the General Research Fund (# 17201819), Collaborative Research Fund (# C7035‐20G) from Hong Kong Special Administrative Region, China.
Funding Information:
X.T. and Z.W. contributed equally to this work. K.W. and DW are grateful for the support from National Key Research and Development Program (No. 2017YFE0120400, No. 2019YFB1704600), National Natural Science Foundation of China (No. 61875082, No. 61905107), Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting (No. 2017KSYS007), Guangdong-Hong Kong-Macao Joint Laboratory (No. 2019B121205001), Innovation Project of Department of Education of Guangdong Province (No. 2019KTSCX157) and Shenzhen Innovation Project (No. JCYJ20190809152411655, No. JCYJ20210324104413036). F.Y. is grateful for the support from National Science Foundation (CMMI-1854554 and CBET-2018411). W.C.H.C. would like to acknowledge the financial support from the General Research Fund (# 17201819), Collaborative Research Fund (# C7035-20G) from Hong Kong Special Administrative Region, China.
Publisher Copyright:
© 2022 The Authors. Advanced Science published by Wiley-VCH GmbH.
Keywords
- area to thickness ratio
- crystal growth
- hole-transport layer
- perovskite single-crystal thin films
ASJC Scopus subject areas
- Medicine (miscellaneous)
- Chemical Engineering (all)
- Materials Science (all)
- Biochemistry, Genetics and Molecular Biology (miscellaneous)
- Engineering (all)
- Physics and Astronomy (all)