Indentation behavior of silicon wafer etched by KOH

Fuqian Yang, Peixing Fei

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Using microindentation technique, the indentation behavior of silicon wafers etched by a KOH water system was investigated. Surface-degradation in the etched Si wafers was observed, which was due to the formation of etch-pits. Indentation-induced radial crack was used to evaluate the indentation-fracture toughness. The indentation-fracture toughness for the etched Si wafers was found to be less than the polished silicon wafers, in agreement with the etching-induced surface degradation. Such surface degradation in the etched Si wafers makes it possible to remove surface defects and smooth the surface of Si wafers by using KOH water system.

Original languageEnglish
Pages (from-to)G51-G53
JournalElectrochemical and Solid-State Letters
Issue number2
StatePublished - 2005

ASJC Scopus subject areas

  • Chemical Engineering (all)
  • Materials Science (all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


Dive into the research topics of 'Indentation behavior of silicon wafer etched by KOH'. Together they form a unique fingerprint.

Cite this