Using microindentation technique, the indentation behavior of silicon wafers etched by a KOH water system was investigated. Surface-degradation in the etched Si wafers was observed, which was due to the formation of etch-pits. Indentation-induced radial crack was used to evaluate the indentation-fracture toughness. The indentation-fracture toughness for the etched Si wafers was found to be less than the polished silicon wafers, in agreement with the etching-induced surface degradation. Such surface degradation in the etched Si wafers makes it possible to remove surface defects and smooth the surface of Si wafers by using KOH water system.
|Electrochemical and Solid-State Letters
|Published - 2005
ASJC Scopus subject areas
- Chemical Engineering (all)
- Materials Science (all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering