Influence of film structure and light on charge trapping and dissipation dynamics in spun-cast organic thin-film transistors measured by scanning Kelvin probe microscopy

L. C. Teague; M. A. Loth; J. E. Anthony

doi:10.1063/1.4720063

Influence of film structure and light on charge trapping and dissipation dynamics in spun-cast organic thin-film transistors measured by scanning Kelvin probe microscopy

L. C. Teague, M. A. Loth, J. E. Anthony

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Herein, time-dependent scanning Kelvin probe microscopy of solution processed organic thin film transistors (OTFTs) reveals a correlation between film microstructure and OTFT device performance with the location of trapped charge within the device channel. The accumulation of the observed trapped charge is concurrent with the decrease in I _SD during operation (V _G = -40 V, V _SD = -10 V). We discuss the charge trapping and dissipation dynamics as they relate to the film structure and show that application of light quickly dissipates the observed trapped charge.

Original language	English
Article number	263305
Journal	Applied Physics Letters
Volume	100
Issue number	26
DOIs	https://doi.org/10.1063/1.4720063
State	Published - Jun 25 2012

Bibliographical note

Funding Information:
L.C.T. acknowledges financial support from the SRNL LDRD program. Cleanroom access was granted under CNM user proposal #23377. Use of the Center for Nanoscale Materials was supported by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. L.C.T. thanks Dr. L. Ocola, Dr. D. Rosenmann, and Dr. R. Divan at CNM for their assistance with photolithography. L.C.T. also thanks SRNL colleagues Dr. R. Zidan, Dr. S.L. Garrison, and Dr. R. Lascola for their thoughtful discussions and K. Huffman, J. DeGange, M. Hudson, B. Blackmon, and J. Jones for engineering support. J.E.A. thanks the Office of Naval Research (Contract No. N00014-11-1-0329) for their support of semiconductor development.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4720063

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title = "Influence of film structure and light on charge trapping and dissipation dynamics in spun-cast organic thin-film transistors measured by scanning Kelvin probe microscopy",

abstract = "Herein, time-dependent scanning Kelvin probe microscopy of solution processed organic thin film transistors (OTFTs) reveals a correlation between film microstructure and OTFT device performance with the location of trapped charge within the device channel. The accumulation of the observed trapped charge is concurrent with the decrease in I SD during operation (V G = -40 V, V SD = -10 V). We discuss the charge trapping and dissipation dynamics as they relate to the film structure and show that application of light quickly dissipates the observed trapped charge.",

author = "Teague, {L. C.} and Loth, {M. A.} and Anthony, {J. E.}",

note = "Funding Information: L.C.T. acknowledges financial support from the SRNL LDRD program. Cleanroom access was granted under CNM user proposal #23377. Use of the Center for Nanoscale Materials was supported by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. L.C.T. thanks Dr. L. Ocola, Dr. D. Rosenmann, and Dr. R. Divan at CNM for their assistance with photolithography. L.C.T. also thanks SRNL colleagues Dr. R. Zidan, Dr. S.L. Garrison, and Dr. R. Lascola for their thoughtful discussions and K. Huffman, J. DeGange, M. Hudson, B. Blackmon, and J. Jones for engineering support. J.E.A. thanks the Office of Naval Research (Contract No. N00014-11-1-0329) for their support of semiconductor development. ",

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AU - Teague, L. C.

AU - Loth, M. A.

AU - Anthony, J. E.

N1 - Funding Information: L.C.T. acknowledges financial support from the SRNL LDRD program. Cleanroom access was granted under CNM user proposal #23377. Use of the Center for Nanoscale Materials was supported by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. L.C.T. thanks Dr. L. Ocola, Dr. D. Rosenmann, and Dr. R. Divan at CNM for their assistance with photolithography. L.C.T. also thanks SRNL colleagues Dr. R. Zidan, Dr. S.L. Garrison, and Dr. R. Lascola for their thoughtful discussions and K. Huffman, J. DeGange, M. Hudson, B. Blackmon, and J. Jones for engineering support. J.E.A. thanks the Office of Naval Research (Contract No. N00014-11-1-0329) for their support of semiconductor development.

PY - 2012/6/25

Y1 - 2012/6/25

N2 - Herein, time-dependent scanning Kelvin probe microscopy of solution processed organic thin film transistors (OTFTs) reveals a correlation between film microstructure and OTFT device performance with the location of trapped charge within the device channel. The accumulation of the observed trapped charge is concurrent with the decrease in I SD during operation (V G = -40 V, V SD = -10 V). We discuss the charge trapping and dissipation dynamics as they relate to the film structure and show that application of light quickly dissipates the observed trapped charge.

AB - Herein, time-dependent scanning Kelvin probe microscopy of solution processed organic thin film transistors (OTFTs) reveals a correlation between film microstructure and OTFT device performance with the location of trapped charge within the device channel. The accumulation of the observed trapped charge is concurrent with the decrease in I SD during operation (V G = -40 V, V SD = -10 V). We discuss the charge trapping and dissipation dynamics as they relate to the film structure and show that application of light quickly dissipates the observed trapped charge.

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Influence of film structure and light on charge trapping and dissipation dynamics in spun-cast organic thin-film transistors measured by scanning Kelvin probe microscopy

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Bibliographical note

ASJC Scopus subject areas

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