Herein, time-dependent scanning Kelvin probe microscopy of solution processed organic thin film transistors (OTFTs) reveals a correlation between film microstructure and OTFT device performance with the location of trapped charge within the device channel. The accumulation of the observed trapped charge is concurrent with the decrease in I SD during operation (V G = -40 V, V SD = -10 V). We discuss the charge trapping and dissipation dynamics as they relate to the film structure and show that application of light quickly dissipates the observed trapped charge.
|Journal||Applied Physics Letters|
|State||Published - Jun 25 2012|
Bibliographical noteFunding Information:
L.C.T. acknowledges financial support from the SRNL LDRD program. Cleanroom access was granted under CNM user proposal #23377. Use of the Center for Nanoscale Materials was supported by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. L.C.T. thanks Dr. L. Ocola, Dr. D. Rosenmann, and Dr. R. Divan at CNM for their assistance with photolithography. L.C.T. also thanks SRNL colleagues Dr. R. Zidan, Dr. S.L. Garrison, and Dr. R. Lascola for their thoughtful discussions and K. Huffman, J. DeGange, M. Hudson, B. Blackmon, and J. Jones for engineering support. J.E.A. thanks the Office of Naval Research (Contract No. N00014-11-1-0329) for their support of semiconductor development.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)